Microfabrication and calibration of a single-polarity piezoresistive three-dimensional stress sensing chip

Gharib, H H; Moussa, Walied A.

doi:10.1088/0960-1317/23/3/035019

Cited by 13 publications

(4 citation statements)

References 26 publications

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“…A 3D stress-sensing chip employing our ten-element singlepolarity rosette was micro-fabricated and calibrated to test the rosette for extraction of the six stress components [19]. The sensing chip, measuring 7 mm × 7 mm × 0.3 mm, has three rosette sites: a center rosette and two edge rosettes, as shown in figure 2.…”

Section: Test Chipsmentioning

confidence: 99%

“…On the other hand, either the p-type or n-type elements in a dual-polarity rosette are confined to high doping concentrations, and consequently lower sensitivity, since the n-well or p-well needs to have a higher concentration than the background silicon and a lower concentration than the sensing elements. In our recent publication, a silicon chip employing the single-polarity rosette was prototyped and fully calibrated [19]. The objective of the current paper is to present our first detailed account of the experimental testing of the prototyped sensing chip to demonstrate the capability of the singlepolarity rosette in the extraction of the 3D stress components.…”

Section: Introductionmentioning

confidence: 99%

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Testing of a single-polarity piezoresistive three-dimensional stress-sensing chip

Gharib¹,

Moussa²

2013

J. Micromech. Microeng.

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A new piezoresistive stress-sensing rosette is developed to extract the components of the three-dimensional (3D) stress tensor using single-polarity (n-type) piezoresistors. This paper presents the testing of a micro-fabricated sensing chip utilizing the developed single-polarity rosette. The testing is conducted using a four-point bending of a chip-on-beam to induce five controlled stress components, which are analyzed both numerically and experimentally. Numerical analysis using finite element analysis is conducted to study the levels of the induced stress components at three rosette-sites and the levels of the stress field non-uniformities, and to simulate the extracted stress components from the sensing rosette. The experimental analysis applied tensile and compressive loads over three rosette-sites at different load increments. The experimentally extracted stress components show good linearity with the applied load and values close to the numerical model.

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Section: Test Chipsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Testing of a single-polarity piezoresistive three-dimensional stress-sensing chip

Gharib¹,

Moussa²

2013

J. Micromech. Microeng.

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“…They were able to construct a sensing rosette, consists of two groups of p and n-type piezoresistors oriented over (111) silicon substrate, which is capable of monitoring the 3D stress/strain state. Gharib et al were able to devise a single-polarity (n-type) PR sensor for thermally compensated 3D stress measurement [11][12][13]. The use of only n-type piezoresistors, to develop 3D stress/strain rosettes, is found to be more appealing due to the simplicity of the microfabrication since there is no need for the p-type doping equipment.…”

Section: Introductionmentioning

confidence: 99%

Development of MEMS-based piezoresistive 3D stress/strain sensor using strain technology and smart temperature compensation

Kayed

Balbola

Lou

et al. 2021

J. Micromech. Microeng.

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This paper presents the microfabrication and testing of a membrane-free eight-element single-polarity (n-type) sensing rosette integrated with strained silicon technology over (111) silicon plane to measure the full 3D stress/strain tensor with full temperature compensation. Such n-type piezoresistive (PR) sensor has low sensitivity to the out-of-plane components compared to the in-plane components. To improve the sensitivity of such sensors to the out-of-plane components, a strained silicon technique was integrated into the sensing rosette during the microfabrication process using a highly compressive film produced by plasma enhanced chemical vapor deposition silicon nitride. For experimental verification, a prototype device featuring the proposed sensing rosette was microfabricated using semiconductors fabrication processes. The experimental analysis applied both, in-plane and out-of-plane stresses at different temperatures over a range from −20 °С to 60 °С. In this work, a smart sensing calibration algorithm, utilizing machine learning, is employed to reduce the temperature impact on both sensitivity and resistance of PR coefficients during stress measurement. The developed sensor is capable of accurately extracting the applied stress/strain components with temperature compensation.

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“…STRESSOR DESIGN A ten-elements sensing rosette, which was developed by the author's group, was utilized to study both global biaxial and local uniaxial strain. This chip was fabricated on (111) silicon to develop a set of independent linear equations that yield the six stress components with full-temperature compensation [22], [23]. The strained silicon technology has been integrated during microfabrication via deposition of highly compressive plasma enhanced chemical vapor deposition (PECVD) nitride film that bends the substrate as plotted in Figure 2.…”

Section: Introductionmentioning

confidence: 99%

Design, Fabrication, And Calibration Of A Mems Based Sensing Rosette For Quantifying The Influence Of Strain Engineering On The Piezoresistive Coefficients

Balbola¹,

Moussa²

2018

Progress in Canadian Mechanical Engineering

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Strain has been used extensively in enhancing the electron mobility for high speed and low power transistors. As stretching the silicon atoms away beyond their normal atomic space has a significant influence on the carrier mobility. In this paper, to study the effect of strained silicon on piezoresistivity, the strained silicon will be integrated into a ten element sensing rosette, that utilizes the unique properties of crystalline silicon over the (111) plane to fully extract the six stress components in fully temperature compensated manner. Two chips were designed and fabricated, where the pre-strain state was induced onto the silicon substrate during microfabrication. In the first design, a highly compressive film (stressor layer) was utilized to globally produce a tensile strain at the front side of the substrate where the sensing elements were fabricated. While in the second design, the stressor layer was patterned in a way allowing for inducing both local tensile and compressive transverse uniaxial pre-strain onto the substrate. In another word, stressor strip with intrinsic compressive stress will cause a tensile pre-strain underneath it and compressive stress on both sides. This allows for applying different local strain using the same stressor rather than using nitride capping for tensile or silicon germanium for compressive as used on strained based transistors. To evaluate the effect of the pre-strain on the piezoresistive coefficients, uniaxial, thermal, and hydrostatic loading will be utilized to calibrate both designs.

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Microfabrication and calibration of a single-polarity piezoresistive three-dimensional stress sensing chip

Cited by 13 publications

References 26 publications

Testing of a single-polarity piezoresistive three-dimensional stress-sensing chip

Testing of a single-polarity piezoresistive three-dimensional stress-sensing chip

Development of MEMS-based piezoresistive 3D stress/strain sensor using strain technology and smart temperature compensation

Design, Fabrication, And Calibration Of A Mems Based Sensing Rosette For Quantifying The Influence Of Strain Engineering On The Piezoresistive Coefficients

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