Abstract:Surface plasmon resonance (SPR) based sensors are usually designed using the Kretschmann prism coupling configuration in which an input beam couples with a surface plasmon through a thin metal film. This is generally preferred by sensor developers for building planar devices instead of the Otto prism coupling configuration, which, for efficient coupling, requires the metal surface to be maintained at a distance on the order of the wavelength from the input prism surface. In this paper, we report on the microfa… Show more
“…A silicon wafer was used as substrate to fabricate several devices. First, an initial cavity with a depth of 2.5 m was formed on the silicon substrate using a deep reactive ion etching (DRIE) process [1], with a thin positive photoresist (PR) used as an etch mask, as illustrated in Fig.1. Then, the PR was removed using an oxygen plasma etcher.…”
Section: Open Otto Chip Fabricationmentioning
confidence: 99%
“…We have recently reported on the fabrication of an Otto chip device [1], capable of exhibiting the surface plasmon resonance -SPR -effect [2]- [3]. The device comprises a closed structure having a well-defined gap distance between the inner surface of a quartz window and the metal surface.…”
Section: Introductionmentioning
confidence: 99%
“…By use of the traditional prism coupling configuration [2]- [3], an input light beam can be used to excite a surface plasmon on the metal surface. The critical step in fabricating such a structure is the sealing without offsetting the gap distance, which is a critical parameter to define the degree of coupling between the incoming beam and the surface plasmon on the metal [1].…”
An Otto chip device fabricated on silicon and sealed with a quartz window has recently been demonstrated as a potential alternative for the traditional Kretschmann based configuration for the development of surface plasmon resonance -SPR -sensors. We have fabricated open Otto chip structures as well and have characterized the surface plasmon resonance -SPR -effect at a wavelength of 975.1 nm. In this paper we report on the potential of these structures to act as pressure sensors.
“…A silicon wafer was used as substrate to fabricate several devices. First, an initial cavity with a depth of 2.5 m was formed on the silicon substrate using a deep reactive ion etching (DRIE) process [1], with a thin positive photoresist (PR) used as an etch mask, as illustrated in Fig.1. Then, the PR was removed using an oxygen plasma etcher.…”
Section: Open Otto Chip Fabricationmentioning
confidence: 99%
“…We have recently reported on the fabrication of an Otto chip device [1], capable of exhibiting the surface plasmon resonance -SPR -effect [2]- [3]. The device comprises a closed structure having a well-defined gap distance between the inner surface of a quartz window and the metal surface.…”
Section: Introductionmentioning
confidence: 99%
“…By use of the traditional prism coupling configuration [2]- [3], an input light beam can be used to excite a surface plasmon on the metal surface. The critical step in fabricating such a structure is the sealing without offsetting the gap distance, which is a critical parameter to define the degree of coupling between the incoming beam and the surface plasmon on the metal [1].…”
An Otto chip device fabricated on silicon and sealed with a quartz window has recently been demonstrated as a potential alternative for the traditional Kretschmann based configuration for the development of surface plasmon resonance -SPR -sensors. We have fabricated open Otto chip structures as well and have characterized the surface plasmon resonance -SPR -effect at a wavelength of 975.1 nm. In this paper we report on the potential of these structures to act as pressure sensors.
“…A planar dual-band antenna with multiband has the reliability and simplicity required to be integrated into chemical sensors heads, operating at infrared wavelengths [1], and respective optoelectronics in a package. ISM-band antennas are usually employed to undertake high quality data transmission using unlicensed bands.…”
A planar dual-band circular antenna for a chemical wireless sensor network is described in this paper. Four antennas compose the wireless sensor package and one antenna is selected at a given time using an SP4T switch. This work describes the unit antenna used to transmit sensor information to a nearby hub that operates in the ISM bands. The antenna is composed of concentric shorted annular rings using substrate integrated waveguides and includes a circular patch at its center. The antenna presents two types of radiation patterns, one omni-directional in the azimuth plane at 2.4 GHz, and one uni-directional in the elevation plane at 5.8 GHz. The simulated gains obtained at 2.4 GHz and 5.8 GHz are 2 dB and 7 dB, respectively.
“…Thus, the adhesion layer between the metal and substrate does not affect the quality factor of the SPR effect. Additionally the channel height can be thinner compared to SPR chips based on the Kretschmann coupling configuration [14]. Furthermore, opaque materials such as silicon, which has a number of chemical and mechanical advantages, can be used as a substrate.…”
In this paper, an Otto coupling configuration based SPR chip is designed, simulated and fabricated using a silicon-on-quartz (SoQ) bonding process. The simulation of the SPR effect is conducted using COMSOL Multiphysics simulator (Altsoft Co.) with the designed chip dimensions. Optical constants of the materials are interpolated from data available in the literature. The size of the fabricated SPR chip is 30 30 1 mm . Resonance angle and reflectance are measured to be 42.19 degree and 0.411, respectively, using an automated reflectometer. A discrepancy between measurement and simulation results is discussed by a nonlinear regression analysis of the optical constant of the deposited gold layer used as a thin metal film. The SoQ bonding process is a feasible approach for implementation of Otto coupling configuration based SPR chips.2
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