Microdefects and electrical uniformity of InP annealed in phosphorus and iron phosphide ambiances

Zhou, Dong; Zhao, Yuchao; Zeng, Yiping; Manlong, Duan; Sun, Wenping; Jinghua, Jiao; Li, Lin

doi:10.1016/j.jcrysgro.2003.07.009

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Cited by 4 publications

(2 citation statements)

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“…5a). Some authors revealed silhouettes of non-completed cells in asgrown material [63,64,65]. Shimizu et al [12] measured in crystals grown under non-stoichiometric conditions FWHM values of the XRC between 10 and 100 arc sec which they attributed to a mosaic structure with dislocation-enriched boundaries.…”

Section: Gap and Inpmentioning

confidence: 99%

Dislocation cell structures in melt‐grown semiconductor compound crystals

Rudolph

2004

Cryst. Res. Technol.

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The phenomenon of dislocation patterning during melt growth of III-V, II-VI and IV-VI semiconductor crystals is discussed. The paper is focused on the formation of cellular structures driven by the growth inherent thermo-mechanical stress. Of particular interest is the scaling of relations between cells size, dislocation density and acting shear stress. Among the materials there are characteristic similarities but also significant variations of the cell genesis. After the related compound specifics are discussed possible measures for retardation of cell patterning during growth are demonstrated.

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Section: Gap and Inpmentioning

confidence: 99%

Dislocation cell structures in melt‐grown semiconductor compound crystals

Rudolph

2004

Cryst. Res. Technol.

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“…2. It has also been shown that the electrical uniformity of SI-InP is better when the concentration of the defects is low [21]. Therefore, the results present an effective approach for the manufacture of SI-InP materials with higher reliability and uniformity.…”

Section: Article In Pressmentioning

confidence: 85%