Microcomposite and Nanocomposite Structures from Chemical Vapor Deposition in the Silicon–Titanium–Carbon System

Touanen, M.; Teyssandier, F.; Ducarroir, M.; Maline, M.; Hillel, R.; Derep, J. L.

doi:10.1111/j.1151-2916.1993.tb03928.x

Cited by 17 publications

(3 citation statements)

References 30 publications

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“…The gaseous mixture flowing through the column is composed of the hydrogen carrier gas previously laden with TiCl4 vapor in the evaporator vessel. Since the temperature of the column is lower than that of the evaporator, excess TiCl4 condenses on the wall of the column, leading to the saturation of the carrier gas [39].…”

Section: Rcvdmentioning

confidence: 99%

Synthesis and properties of multiscale porosity TiC-SiC ceramics

Baux

Nouvian

Arnaud

et al. 2019

Journal of the European Ceramic Society

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A process combining the pyrolysis of a lignocellulosic structure and reactive gas treatments has been developed to prepare porous TiC-SiC ceramics for solar receivers. The natural micro-porosity of balsa was complemented by a high open macro-porosity by laser cutting a periodical arrangement of parallel channels. The lignocellulosic structure was first pyrolysed into carbon. This reactive carbon material was then converted into TiC by Reactive Chemical Vapor Deposition (RCVD) using TiCl4/H2. After controlling the absence of cracks due to volume changes, the TiC structure was finally infiltrated by the Chemical Vapor Infiltration (CVI) of SiC using CH3SiCl3/H2. The density, porous structure, elemental and phase compositions, oxidation behavior and crushing strength were assessed after pyrolysis, RCVD and CVI. The SiC CVI coating significantly improves the compressive strength, the oxidation resistance and the thermal properties. The SiC layer is no longer fully protective at high temperature but the mechanical properties remain reasonably high.

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Section: Rcvdmentioning

confidence: 99%

Synthesis and properties of multiscale porosity TiC-SiC ceramics

Baux

Nouvian

Arnaud

et al. 2019

Journal of the European Ceramic Society

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“…The addition of silicon to TiN films deposited by physical and chemical vapor deposition methods has yielded coatings with high hardness levels. [3][4][5][6] The addition of silicon to TiC films has been examined in several studies, [7][8][9][10][11][12] but the hardness of these films has not greatly exceeded that of bulk TiC. Results for physical vapor deposition (PVD) films of Ti-Si-C-N recently have been reported, and they have shown hardness levels in the GPa range, along with a highly disordered structure.…”

Section: Introductionmentioning

confidence: 99%

Mechanical Properties of Sputter‐Deposited Titanium‐Silicon‐Carbon Films

Krzanowski

Koutzaki

2001

Journal of the American Ceramic Society

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The effect of SiC additions on the mechanical properties of TiC films was investigated. Ti-Si-C films with varying SiC content were deposited using dual-cathode radio-frequency magnetron sputtering. The nanoindentation hardness of these films increased with SiC content to a maximum of 20 -22 GPa for films in the range of 15-30 at.% SiC. The elastic modulus was also measured, and the hardness to modulus ratio (H/E) increased with SiC content, indicating that hardness increases were due to microstructural effects. The residual stress was measured in several films, but was low in magnitude, indicating that hardness measurements were not influenced by residual stress. TEM examination of several films revealed that the SiC additions altered the film microstructure in a manner that could account for the observed hardness increases.

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“…16,17 These studies suggest that the composite of SiC and TiC is a promising material. [18][19][20][21][22][23][24] The present work was undertaken to deposit a composite material of SiC and TiC from the (CH 3 ) 2 SiCl 2 /TiCl 4 /CH 4 chemical system.…”

mentioning

confidence: 99%

Chemical Vapor Deposition of Silicon Carbide/Titanium Carbide Composite Films from Dichlorodimethylsilane, Titanium Tetrachloride, and Methane

Takeuchi

Miyoshi

Egashira

et al. 1999

J. Electrochem. Soc.

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Composite films of silicon carbide (SiC) and titanium carbide (TiC) were prepared from mixtures of dichlorodimethylsilane (DDS), titanium tetrachloride false(TiCl4false) , and methane false(CH4false) at 1273 K by atmospheric‐pressure chemical vapor deposition (APCVD). The addition of DDS significantly increased TiC deposition at a temperature where insignificant deposition of TiC occurred from TiCl4 and CH4 in the absence of DDS. The composition of the composite films strongly depended on the feed ratio of DDS to TiCl4 . SiC/TiC composites formed for DDS/TiCl4>1.5 , and pure TiC formed for DDS/TiCl4

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Microcomposite and Nanocomposite Structures from Chemical Vapor Deposition in the Silicon–Titanium–Carbon System

Cited by 17 publications

References 30 publications

Synthesis and properties of multiscale porosity TiC-SiC ceramics

Synthesis and properties of multiscale porosity TiC-SiC ceramics

Mechanical Properties of Sputter‐Deposited Titanium‐Silicon‐Carbon Films

Chemical Vapor Deposition of Silicon Carbide/Titanium Carbide Composite Films from Dichlorodimethylsilane, Titanium Tetrachloride, and Methane

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