Microcomb Source Based on InP DFB / Si<sub>3</sub>N<sub>4</sub> Microring Butt-Coupling

Boust, Sylvain; Dirani, Houssein El; Youssef, Laurène; Robert, Yannick; Larrue, Alexandre; Petit-Etienne, C.; Vinet, Eric; Kerdilès, S.; Pargon, E.; Faugeron, Mickaël; Vallet, Marc; Duport, François; Sciancalepore, Corrado; Dijk, Frédéric van

doi:10.1109/jlt.2020.3002272

Cited by 10 publications

(9 citation statements)

References 32 publications

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“…Hybrid lasers based on the thick Si3N4 platform can benefit from its high tuning speed. The previous work has proved the feasibility of a hybrid laser based on the thick Si3N4 platform [43][44][45][46][47][48]. However, most of them focus on the Rayleigh backscattering in the Si3N4 ring resonator for feedback or injection locking of a hybrid laser [43][44][45][46][47], similar to the injection locking used in MgF2 whispering gallery mode (WGM) resonators [49,50].…”

Section: Introductionmentioning

confidence: 99%

Thermally Tuned High-Performance III-V/Si₃N₄ External Cavity Laser

et al. 2021

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Silicon nitride (Si 3 N 4) has a higher nonlinear threshold compared to silicon, which reduces the effect of two-photon absorption. However, the low thermo-optic coefficient and the reduced refractive index contrast of thin Si 3 N 4 waveguides lead to a low thermal tuning speed and low thermal efficiency. This paper demonstrates a widely tunable III-V/Si 3 N 4 hybrid-integrated external cavity laser with a relatively faster switching time. The Si 3 N 4 external feedback circuit is based on 800-nm-thick Si 3 N 4 waveguides with an optical confinement factor of 87%. It allows the reduction of the oxide under-cladding layer thickness to 4 μm and the oxide upper-cladding layer to 1.7 μm without additional loss. The switching time between two non-adjacent lasing wavelengths is 60.7 μs. The maximum output power is 34 mW under 500 mA injection current. The side mode suppression ratio is more than 70 dB over the tuning range of 58.5 nm. The laser intrinsic linewidth is 2.5 kHz.

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Section: Introductionmentioning

confidence: 99%

Thermally Tuned High-Performance III-V/Si₃N₄ External Cavity Laser

et al. 2021

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“…Another approach was based on a Si 3 N 4 microresonator buttcoupled to a semiconductor optical amplifier (SOA) with on-chip Vernier filters and heaters for soliton initiation and control 34 . The integrated soliton microcomb based on the direct pumping of a Si 3 N 4 microresonator by a III-V distributed feedback (DFB) laser has been reported 35,36 . Recent demonstrations of integrated packaging of DFB lasers and ultra-high-Q Si 3 N 4 microresonators with low repetition rates 37 made turn-key operation of such devices possible.…”

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confidence: 99%

Dynamics of soliton self-injection locking in optical microresonators

et al. 2021

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Soliton microcombs constitute chip-scale optical frequency combs, and have the potential to impact a myriad of applications from frequency synthesis and telecommunications to astronomy. The demonstration of soliton formation via self-injection locking of the pump laser to the microresonator has significantly relaxed the requirement on the external driving lasers. Yet to date, the nonlinear dynamics of this process has not been fully understood. Here, we develop an original theoretical model of the laser self-injection locking to a nonlinear microresonator, i.e., nonlinear self-injection locking, and construct state-of-the-art hybrid integrated soliton microcombs with electronically detectable repetition rate of 30 GHz and 35 GHz, consisting of a DFB laser butt-coupled to a silicon nitride microresonator chip. We reveal that the microresonator’s Kerr nonlinearity significantly modifies the laser diode behavior and the locking dynamics, forcing laser emission frequency to be red-detuned. A novel technique to study the soliton formation dynamics as well as the repetition rate evolution in real-time uncover non-trivial features of the soliton self-injection locking, including soliton generation at both directions of the diode current sweep. Our findings provide the guidelines to build electrically driven integrated microcomb devices that employ full control of the rich dynamics of laser self-injection locking, key for future deployment of microcombs for system applications.

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“…Recent advances in telecom-wavelength lasing based on high-gain GaAs QDs heteroepitaxially grown on Si and SOI substrates with low thresholds and high temperature stability [282], indicate that it is a promising gain material for III-V/SiN monolithic integration and there is a strong possibility that 100 mW level heterogeneous/monolithic III-V/SiN lasers are achievable in the near future. [239,, (c) schematic layout of a heterogeneous III-V/SiN laser and its optical taper between SiN and III-V gain sections [245] and (d) development of linewidth of III-V/SiN lasers [244,246,248,249,252,254,[256][257][258][261][262][263][264]266,267,270,[272][273][274][275][276]279,280,[283][284][285].…”

Section: Iii-v/sin Integration: Towards Efficient Monolithic Lasers O...mentioning

confidence: 99%

“…Benefiting from the fast-developing SiN devices, especially resonators with Q up to >200 M [294], a highly precise phase (factor A) and spectral (factor B) feedback [295,296] is achievable in addition to an extended cavity length (thereby reducing ∆ω 0 ), likely to generate ultranarrow linewidth. Figure 11d displays the state-of-the-art linewidth of III-V/SiN-coupled lasers in terms of integration method [244,246,248,249,252,254,[256][257][258][261][262][263][264]266,267,270,[272][273][274][275][276]279,280,[283][284][285]]. It appears that significant progress has been made with hybrid integration when compared to heterogenous/monolithic integration, though the latter started its development at a later stage.…”

Section: Iii-v/sin Integration: Towards Efficient Monolithic Lasers O...mentioning

confidence: 99%

A Review of Capabilities and Scope for Hybrid Integration Offered by Silicon-Nitride-Based Photonic Integrated Circuits

Gardes

Shooa

Paoli

et al. 2022

Sensors

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In this review we present some of the recent advances in the field of silicon nitride photonic integrated circuits. The review focuses on the material deposition techniques currently available, illustrating the capabilities of each technique. The review then expands on the functionalisation of the platform to achieve nonlinear processing, optical modulation, nonvolatile optical memories and integration with III-V materials to obtain lasing or gain capabilities.

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Microcomb Source Based on InP DFB / Si₃N₄ Microring Butt-Coupling

Cited by 10 publications

References 32 publications

Thermally Tuned High-Performance III-V/Si₃N₄ External Cavity Laser

Thermally Tuned High-Performance III-V/Si₃N₄ External Cavity Laser

Dynamics of soliton self-injection locking in optical microresonators

A Review of Capabilities and Scope for Hybrid Integration Offered by Silicon-Nitride-Based Photonic Integrated Circuits

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Microcomb Source Based on InP DFB / Si3N4 Microring Butt-Coupling

Cited by 10 publications

References 32 publications

Thermally Tuned High-Performance III-V/Si3N4 External Cavity Laser

Thermally Tuned High-Performance III-V/Si3N4 External Cavity Laser

Dynamics of soliton self-injection locking in optical microresonators

A Review of Capabilities and Scope for Hybrid Integration Offered by Silicon-Nitride-Based Photonic Integrated Circuits

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Product

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Microcomb Source Based on InP DFB / Si₃N₄ Microring Butt-Coupling

Thermally Tuned High-Performance III-V/Si₃N₄ External Cavity Laser

Thermally Tuned High-Performance III-V/Si₃N₄ External Cavity Laser