Microchip Post‐Processing: There is Plenty of Room at the Top

Schmitz, Jurriaan

doi:10.1002/9781118678107.ch8

Cited by 4 publications

(4 citation statements)

References 31 publications

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“…The motivation behind this work lies in the pursuit of self-healing transistors, see e.g. [8,9]. Since the primary actor in HCD, the hot carrier itself, is absent during our recovery experiments, it is safe to assume that the physical mechanisms governing recovery are different.…”

Section: Introductionmentioning

confidence: 99%

Observations on the recovery of hot carrier degradation of hydrogen/deuterium passivated nMOSFETs

Jong¹,

Salm²,

Schmitz³

2017

Microelectronics Reliability

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Section: Introductionmentioning

confidence: 99%

Observations on the recovery of hot carrier degradation of hydrogen/deuterium passivated nMOSFETs

Jong¹,

Salm²,

Schmitz³

2017

Microelectronics Reliability

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“…In a "More than Moore" approach to integration, above integrated circuit (above-IC) [1]- [3] CMOS image sensors meet this need for cost effective sensors. This approach however strongly limits the thermal budget for sensor fabrication due to risks of damage and diffusion in the underlying CMOS interconnections [4], [5]. A solution to maintain a low thermal budget (< 350 °C) is to rely on Plasma Enhanced Chemical Vapor Deposition (PECVD), which makes it possible to manufacture a wide range of thin films.…”

Section: Introductionmentioning

confidence: 99%

Potential of hydrogenated microcrystalline silicon-germanium for low thermal budget near infrared sensors

Wilson¹,

Fourmond²,

Saidi³

et al. 2023

Physics and Simulation of Optoelectronic Devices XXXI

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Microcrystalline Silicon-Germanium (μc-SiGe:H) is a low bandgap material whose optical and electrical properties strongly depend on deposition conditions. In this work, an above integrated circuit (above-IC) [1]–[3] compatible, near infrared (NIR) sensor based on microcrystalline Silicon-Germanium is produced and characterized. The N-I-P photodiode is obtained by radio frequency plasma enhanced chemical vapor deposition (RF-PECVD) from a SiH4 + GeH4 + H2 gas mixture. Quantum efficiency measurements reveals a 60 at.% Ge fraction is optimal for a 200 nm thick μc-SiGe:H intrinsic absorber layer. Above this threshold, the degradation in electrical properties prevails on the gain in absorption.

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“…This approach, dubbed Above-IC or CMOS post-processing, has been pursued since the 1980's [6]. It offers great opportunities for the field of microelectronics [7,8].…”

Section: Introductionmentioning

confidence: 99%

Fabrication and properties of GeSi and SiON layers for above-IC integrated optics

Schmitz

Rangarajan

Kovalgin

2015

Solid-State Electronics

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a b s t r a c tA study is presented on silicon oxynitride material for waveguides and germanium-silicon alloys for p-in diodes. The materials are manufactured at low, CMOS-backend compatible temperatures, targeting the integration of optical functions on top of CMOS chips. Low-temperature germanium-silicon deposition, crystallization and doping are studied for integrated photo detection up to $1500 nm wavelength. An investigation of the process window for laser crystallization is presented aiming toward the localization control of crystal boundaries and the achievement of crystals larger than 2 lm. Further, an inductivelycoupled-plasma chemical vapor deposition process is presented for silicon oxynitride manufacturing at 150°C wafer temperature, yielding low-loss material in a wide optical spectral range. Integration schemes for an optical plane on top of CMOS using these materials are discussed.

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Microchip Post‐Processing: There is Plenty of Room at the Top

Cited by 4 publications

References 31 publications

Observations on the recovery of hot carrier degradation of hydrogen/deuterium passivated nMOSFETs

Observations on the recovery of hot carrier degradation of hydrogen/deuterium passivated nMOSFETs

Potential of hydrogenated microcrystalline silicon-germanium for low thermal budget near infrared sensors

Fabrication and properties of GeSi and SiON layers for above-IC integrated optics

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