Micro-strain governed photoluminescence emission intensity of sol-gel spin coated Eu doped ZnO thin films

Kumawat, Ashok; Chattopadhyay, Saikat; Misra, Kamakhya Prakash; Misra, R.D.K.; Kumari, Priyanka

doi:10.1016/j.tsf.2022.139521

Cited by 7 publications

(3 citation statements)

References 46 publications

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“…To ensure that the compound (ZnO) intended to be synthesised retains its original form over an extended period of time and to boost the viscosity of generated Ce doped ZnO solution, diethanol-amine is primarily used in many industrial and material processing processes. Additionally, it aids in preserving a constant temperature for crystallisation or a controlled rate of oxide reduction as we age [49].…”

Section: Methodsmentioning

confidence: 99%

Significance of microstrain in impacting band gap and photoluminescence behavior of Ce-doped ZnO thin films deposited via sol-gel process

Kumawat¹,

Chattopadhyay²,

Misra³

et al. 2023

Phys. Scr.

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The purpose of this study is to analyse the importance of micro-strain in affecting the band gap and photoluminescence (PL) intensity of sol-gel-spin-coated Ce-doped ZnO thin films on glass slides. The presence of the (100) plane in the fabricated thin film was discovered using X-ray diffraction thereby indicating the presence of strongly orientated monocrystalline ZnO hexagonal wurtzite phase. On doping with Ce, the micro-strain in the ZnO thin films changed from (2.49 – 4.84) x10-3, and the crystallite size ranged from 26.23 to 43.03 nm. UV-visible spectroscopy revealed that the optical transparency of the undoped and Ce-doped ZnO films was between 60 to 85 percent, however the doped films’ absorption dip was slightly shifted from 378 to 380 nm. For Ce-doped ZnO thin films, the increase in band gap values determined using Tauc's plot was in the range of 3.19 to 3.44 eV. No change in the peak of UV emission was visible in the PL emission spectra after Ce doping. The micro-strain brought on by doping ZnO with Ce controlled the decrease in PL intensity. On doping with Ce up to 3 at.%, PL intensity and micro-strain both reduced, then climbed till Ce 5 at.%, and ultimately declined when the Ce content was 6 at.%. According to studies using scanning electron microscopy, the undoped ZnO film morphology was characterised by spherical particles with rod-like growth structures. For 1, 2, 5, and 6 at.% Ce-doped ZnO thin films, this structure was changed to a nanorod-like structure with small nanorods attached to a long rod. But lengthy chain linkage structures were found in the event of 3 at.% Ce doping. The preceding results are discussed from a doping perspective.

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Section: Methodsmentioning

confidence: 99%

Significance of microstrain in impacting band gap and photoluminescence behavior of Ce-doped ZnO thin films deposited via sol-gel process

Kumawat¹,

Chattopadhyay²,

Misra³

et al. 2023

Phys. Scr.

Self Cite

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“…Pure ZnO has an optical band gap of 3.35 eV as shown in Fig. 2(b) The direct band gap energy was determined using eqn (6), 54,55 (αhν) 2 = A(hν − E g ) n (6)…”

Section: Ultraviolet-visible (Uv-vis) Analysismentioning

confidence: 99%

Alleviation of cadmium-induced oxidative damage through application of zinc oxide nanoparticles and strigolactones in Solanum lycopersicum L.

Raja,

Singh,

Qadir

et al. 2024

Environ. Sci.: Nano

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“…The PL spectra of Eu‐doped ZnO have been studied to examine the crucial role of dopant (Eu) in the feasible radiative emissions using 325 nm excitation wavelength. [ 100 ] This illustrated the UV and green emissions at 396 nm and 515 nm, respectively. This may be because of the sallow donor arising from the structural defects of Zn, and oxygen vacancies arising during the deep‐level to the valence band transition.…”

Section: Properties Of Zno Nanostructurementioning

confidence: 99%

Recent advances in ZnO nanostructure as a gas‐sensing element for an acetone sensor: a short review

et al. 2022

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Air pollution is a severe concern globally as it disturbs the health conditions of living beings and the environment because of the discharge of acetone molecules. Metal oxide semiconductor (MOS) nanomaterials are crucial for developing efficient sensors because of their outstanding chemical and physical properties, empowering the inclusive developments in gas sensor productivity. This review presents the ZnO nanostructure state of the art and notable growth, and their structural, morphological, electronic, optical, and acetone-sensing properties. The key parameters, such as response, gas detection limit, sensitivity, reproducibility, response and recovery time, selectivity, and stability of the acetone sensor, have been discussed. Furthermore, gas-sensing mechanism models based on MOS for acetone sensing are reported and discussed. Finally, future possibilities and challenges for MOS (ZnO)-based gas sensors for acetone detection have also been explored.

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Micro-strain governed photoluminescence emission intensity of sol-gel spin coated Eu doped ZnO thin films

Cited by 7 publications

References 46 publications

Significance of microstrain in impacting band gap and photoluminescence behavior of Ce-doped ZnO thin films deposited via sol-gel process

Significance of microstrain in impacting band gap and photoluminescence behavior of Ce-doped ZnO thin films deposited via sol-gel process

Alleviation of cadmium-induced oxidative damage through application of zinc oxide nanoparticles and strigolactones in Solanum lycopersicum L.

Recent advances in ZnO nanostructure as a gas‐sensing element for an acetone sensor: a short review

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