Micro-Raman study of the solid products of thermal decomposition of tetraalkylgermanes

MOCVD Synthesis of Germanium Filled “Diamondlike” Carbon Nanotubes and Microtubes from Organogermanium Precursors and Their Field‐Emission Properties

“…The Raman spectra of the Ge-filled CMTs butt-ends were found to exhibit only one very intensive narrow line at 301cm -1 with a halfwidth of Dm 1/2 ≈ 7 cm -1 . [46] This result refines the powder XRD data and shows that pure, highly ordered Ge fills the CMTs. Thus, the Raman data indicate that the Ge-filled CMTs, formed as a result of thermal decomposition of organogermanium precursors, consist of single-crystalline germanium in a cubic form covered with a thin, DLC film.…”

“…The Raman spectrum exhibits a line at 301 cm -1 and two broad overlapping bands with maxima at about 1350 and 1580 cm -1 . [46] The line at 301 cm -1 is known [47] to arise from the vibrational mode of the crystalline germanium in its cubic modification, space group O 7 h (Fd3m). Note that the peaks typical of amorphous Ge [48] are absent.…”

Chemical Vapor Deposition of GeSbTe Thin Films for Next-Generation Phase Change Memory

“…A conventional Ge precursor such as (CH 3 ) 4 Ge has a strong Ge-C bond; thus, its decomposition temperature may be high, and many carbon impurities may be incorporated in its films. 5) Low deposition temperature and low carbon impurity should be observed after using t-C 4 H 9 GeH 3 with one hydrogen atom of dangerous GeH 4 substituted for a bulky t-C 4 H 9 -group, which however can easily be removed. Triisopropylantimony [(i-C 3 H 7 ) 3 Sb, Fig.…”