Micro-Raman scattering study of InGaAs/(AlAs)/AlAsSb quantum wells grown by molecular beam epitaxy

Mozume, T.; Kasai, Junichi

doi:10.1016/j.jcrysgro.2004.12.072

Cited by 7 publications

(6 citation statements)

References 16 publications

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“…The calculated values for ω TO and ω LO of AlAs x Sb 1−x alloy are plotted in Figure 2 for different concentrations x along with the experimental points [6][7][8]. Our simulated data for different values of the composition x agree well with the experimental ones [6-8] within a relative accuracy lower than 3.5% for the transversal phonon frequencies ω TO and lower than 5% for the longitudinal phonon frequencies ω LO ( Figure 2).…”

Section: At Equilibrium (Null Pressure)supporting

confidence: 67%

“…Nevertheless, some experimental results are available and concern mainly the one-mode behavior of phonon frequencies studied by Raman scattering on the ternary alloy AlAs x Sb 1−x [6][7][8] and many other properties such as structural, elastic, dielectric and phonons properties on the binary AlSb and AlAs [9][10][11][12][13][14][15][16][17][18][19][20][21][22][23][24][25]. Only a few ab initio calculations have been carried out on the ternary alloy for comparisons or predictive evaluations [26], whereas many calculations are done for AlAs and AlSb [27][28][29][30][31][32][33][34][35][36].…”

Section: Introductionmentioning

confidence: 99%

“…-, quadratic fit to our data. TO and LO experimental values ( ) from[6], ( ) from[7] and ( ) from[8].…”

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confidence: 99%

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Ab initiocalculation of the elastic properties and the lattice dynamics of the AlAs_xSb_1−xalloy under pressure

Daoud

Bouamama

Djémia

et al. 2011

High Pressure Research

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The lattice dynamics and the elastic properties of the ternary AlAs x Sb 1−x alloy have been studied using the density-functional perturbation theory within the local density approximation and employing the virtualcrystal approximation. We study the variation of the optical phonon frequencies (ω TO and ω LO ), the high-frequency (ε ∞ ) and static (ε 0 ) dielectric coefficients, the dynamic effective charge (Z * ) and the elastic constants (C 11 , C 12 , C 44 ) as a function of the composition (x) and the pressure. We have also predicted the behavior of the optical and acoustical phonons with composition x at the X and L high symmetry points under pressure and determined the Grüneisen parameter. We have found that no mechanical instabilities are associated with the structural transition at high pressures for all compositions.

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Section: At Equilibrium (Null Pressure)supporting

confidence: 67%

Section: Introductionmentioning

confidence: 99%

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Ab initiocalculation of the elastic properties and the lattice dynamics of the AlAs_xSb_1−xalloy under pressure

Daoud

Bouamama

Djémia

et al. 2011

High Pressure Research

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“…35 However, because only one of these modes is active in scattering electrons, 36 we use Eq. 35 However, because only one of these modes is active in scattering electrons, 36 we use Eq.…”

Section: Interface-optical Phononsmentioning

confidence: 99%

Calculation of the electron mobility in III-V inversion layers with high-κ dielectrics

O’Regan

Fischetti

Sorée

et al. 2010

Journal of Applied Physics

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Electron mobility dependence on annealing temperature of W ∕ Hf O 2 gate stacks: The role of the interfacial layer J. Appl. Phys. 99, 023709 (2006); 10.1063/1.2163980Simulations of quantized inversion layer electron transport in 6H-Silicon carbide metal oxide semiconductor structures Appl.We calculate the electron mobility for a metal-oxide-semiconductor system with a metallic gate, high-dielectric layer, and III-V substrate, including scattering with longitudinal-optical ͑LO͒ polar-phonons of the III-V substrate and with the interfacial excitations resulting from the coupling of insulator and substrate optical modes among themselves and with substrate plasmons. In treating scattering with the substrate LO-modes, multisubband dynamic screening is included and compared to the dielectric screening in the static limit and with the commonly used screening model obtained by defining an effective screening wave vector. The electron mobility components limited by substrate LO phonons and interfacial modes are calculated for In 0.53 Ga 0.47 As and GaAs substrates with SiO 2 and HfO 2 gate dielectrics. The mobility components limited by the LO-modes and interfacial phonons are also investigated as a function of temperature. Scattering with surface roughness, fixed interface charge, and nonpolar-phonons is also included to judge the relative impact of each scattering mechanism in the total mobility for In 0.53 Ga 0.47 As with HfO 2 gate dielectric. We show that InGaAs is affected by interfacial-phonon scattering to an extent larger than Si, lowering the expected performance, but probably not enough to question the technological relevance of InGaAs.

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“…[11]. According to the Raman selection rules, the y 0 ðzx 0 Þ y 0 configuration allows the TO phonon modes to be observed and the LO phonon modes are forbidden [13]. The observed LO phonons could be induced by the structure disorder, which is weakening the selection rules.…”

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confidence: 99%

Micro-Raman study on chirped InGaAs-InAlAs superlattices

Wang

Liu

et al. 2013

Phys. Status Solidi A

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The folded acoustic phonon and confined optical phonon modes in chirped InGaAs-InAlAs superlattices have been studied by micro-Raman spectroscopy. The folded and confined phonons were probed at the (1 10) and (001) faces. Raman scattering measurements for the chirped superlattices and an InGaAs film were performed at different temperatures.The temperature dependence of the longitudinal optical phonon frequencies indicates that a compressive strain existed in the InGaAs layers of the chirped superlattices, which is significant for analyzing the device failure of quantum cascade lasers operating at higher active region temperatures.

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Micro-Raman scattering study of InGaAs/(AlAs)/AlAsSb quantum wells grown by molecular beam epitaxy

Cited by 7 publications

References 16 publications

Ab initiocalculation of the elastic properties and the lattice dynamics of the AlAs_xSb_1−xalloy under pressure

Ab initiocalculation of the elastic properties and the lattice dynamics of the AlAs_xSb_1−xalloy under pressure

Calculation of the electron mobility in III-V inversion layers with high-κ dielectrics

Micro-Raman study on chirped InGaAs-InAlAs superlattices

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Micro-Raman scattering study of InGaAs/(AlAs)/AlAsSb quantum wells grown by molecular beam epitaxy

Cited by 7 publications

References 16 publications

Ab initiocalculation of the elastic properties and the lattice dynamics of the AlAsxSb1−xalloy under pressure

Ab initiocalculation of the elastic properties and the lattice dynamics of the AlAsxSb1−xalloy under pressure

Calculation of the electron mobility in III-V inversion layers with high-κ dielectrics

Micro-Raman study on chirped InGaAs-InAlAs superlattices

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Ab initiocalculation of the elastic properties and the lattice dynamics of the AlAs_xSb_1−xalloy under pressure

Ab initiocalculation of the elastic properties and the lattice dynamics of the AlAs_xSb_1−xalloy under pressure