Micro-raman characterization of molecular-beam epitaxial ge heterolayers on Si substrates

Ichimura, M.; Moriguchi, Yukihisa; Usami, Akira; Wada, Takahiro; Wakahara, Akihiro; Sasaki, Akio

doi:10.1007/bf02817354

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Cited by 4 publications

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“…This peak is indicative of a Ge-Si alloy. 8,9 Without the use of a surfactant to saturate surface dangling bonds, Ge and Si can easily diffuse and intermix leading to a highly disordered and rough interface. The same situation is observed in the direct growth of Ge͑001͒ on Si͑001͒ substrates.…”

Section: Resultsmentioning

confidence: 99%

Surfactant-mediated growth and characterization of Ge(211)/Si(211) heterostructures grown by molecular beam epitaxy

Tari

Brill

Sivananthan

et al. 2001

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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Section: Resultsmentioning

confidence: 99%

Surfactant-mediated growth and characterization of Ge(211)/Si(211) heterostructures grown by molecular beam epitaxy

Tari

Brill

Sivananthan

et al. 2001

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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Surfactant-mediated growth of Ge/Si(001) studied by Raman spectroscopy and TEM

Brill

Smith

Chandrasekhar

et al. 1999

Journal of Crystal Growth

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Raman study of strain relaxation in Ge on Si

Ichimura

Usami

Wakahara

et al. 1995

Journal of Applied Physics

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Strain in thin Ge layers grown by molecular beam epitaxy on (100) Si is measured by a Raman technique. When the average Ge thickness is 7 monoatomic layers (ML), Raman results show that the layer is almost coherent to the Si lattice. The strain begins to decrease at an average thickness of 10 ML, i.e., the critical thickness of dislocation generation is 10 ML. On the other hand, the relaxation begins at a thickness of 5 ML, according to reflection high-energy electron diffraction observation during the growth. This initial stage relaxation is due to deformation of islands and not due to dislocation formation. Raman results for thicker layers show that with increasing layer thickness, the misfit strain decreases gradually but more rapidly than predicted by the theory of Matthews and Blakeslee .

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Micro-raman characterization of molecular-beam epitaxial ge heterolayers on Si substrates

Cited by 4 publications

References 14 publications

Surfactant-mediated growth and characterization of Ge(211)/Si(211) heterostructures grown by molecular beam epitaxy

Surfactant-mediated growth and characterization of Ge(211)/Si(211) heterostructures grown by molecular beam epitaxy

Surfactant-mediated growth of Ge/Si(001) studied by Raman spectroscopy and TEM

Raman study of strain relaxation in Ge on Si

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