Micro-pulling down method-grown Er3+:LiCaAlF6 as prospective vacuum ultraviolet laser material

Cadatal-Raduban, Marilou; Shimizu, Toshihiko; Yamanoi, Kohei; Takeda, Kohei; Pham, Minh Hong; Nakazato, Tomoharu; Sarukura, Nobuhiko; Kawaguchi, Noriaki; Fukuda, Kentaro; Suyama, Toshihisa; Yanagida, Takayuki; Yokota, Yuui; Yoshikawa, Akira

doi:10.1016/j.jcrysgro.2011.10.035

Cited by 23 publications

(5 citation statements)

References 25 publications

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“…Gas lasers, such as argon fluoride (ArF) and molecular fluorine (F 2 ), emitting at 192 and 157 nm, respectively, are the predominant sources of VUV radiation, but significant efforts to develop solid-state VUV light sources are underway because of the increasing demands in a wide range of fields. [2][3][4][5][6][7][8][9] Development of VUV detectors is crucially important. High-sensitivity detection of VUV radiation is essential not only for the previously mentioned applications, but also for space science where detection of VUV radiation is among the most effective ways of monitoring space weather and star evolution.…”

Section: Introductionmentioning

confidence: 99%

Influence of Annealing on Thin Film/Substrate Interface and Vacuum Ultraviolet Photoconductivity of Neodymium Fluoride Thin Films

Kato,

Cadatal‐Raduban,

Horiuchi

et al. 2023

Adv Materials Inter

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High photon energy vacuum ultraviolet radiation (VUV, 100−200 nm wavelength) is challenging to detect. It easily degrades conventional silicon and semiconductor photodetectors. Fluoride photodetectors can be the answer, but the correlation between fabrication parameters and photodetector performance is not known. Here, the effect of annealing is investigated on the characteristics of neodymium trifluoride thin film/quartz substrate interface and NdF3 photoconductivity within the VUV. Thin films are deposited on unheated and heated (600 °C) substrates with post‐deposition annealing. Dark current of films on unheated substrates decreases by as much as 1/10 as resistance increases from 1 −12 TΩ after annealing. Dark current of films on heated substrates increases even after annealing, resulting in similar photo and dark currents of ≈303.7 nA and poor detectors. Fluorine diffuses from the film to the substrate during deposition, exacerbated by substrate heating but not by annealing. Fluorine diffusion degrades crystallinity near the interface, increasing the dark current. Fluorine diffusion is absent when MgF2 is used as the heated substrate. Unannealed NdF3/MgF2 detector on 600 °C‐heated substrate and 600 °C‐annealed NdF3/SiO2 detector on unheated substrate exhibit similar resistances of ≈14 TΩ. Considering the film/substrate interface and annealing is crucial when developing VUV photodetectors.

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Section: Introductionmentioning

confidence: 99%

Influence of Annealing on Thin Film/Substrate Interface and Vacuum Ultraviolet Photoconductivity of Neodymium Fluoride Thin Films

Kato,

Cadatal‐Raduban,

Horiuchi

et al. 2023

Adv Materials Inter

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“…The applications are expected to increase in the near future. Therefore, development of light sources emitting below 200 nm wavelengths is rapidly increasing in order to meet the demands [2][3][4][5][6]. Consequently, VUV photodetectors for monitoring these light sources have to be developed [7].…”

Section: Introductionmentioning

confidence: 99%

Femtosecond PLD-grown YF₃ nanoparticle thin films as improved filterless VUV photoconductive detectors

Xi¹,

Cadatal-Raduban²,

Kato³

et al. 2020

Nanotechnology

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A photoconductive detector (PCD) responding only to vacuum ultraviolet (VUV) radiations below 180 nm without any filter was fabricated using an yttrium fluoride (YF3) thin film grown by femtosecond (fs) laser pulsed laser deposition (PLD). The structural morphology (particle size and surface roughness) of the thin film was improved using a low laser fluence and a high substrate temperature during the fabrication. The smallest average particle size achieved was 159 nm with a roughness of 37 nm at a laser fluence of 13.5 J cm−2 and a substrate temperature of 400 °C. The resistances for the dark current of the PCD increased from 10 TΩ to 680 TΩ using YF3 thin films with a smaller average nanoparticle diameter of 159 nm rather than 330 nm. The time response of the PCD to a VUV flash lamp emitting at 170 nm showed that a small average nanoparticle diameter results to a fast response time. By covering the Al electrode pairs with another fs PLD-grown YF3 film, the influence of external photoelectric effect was suppressed and the response wavelength edge decreased from 280 nm to 180 nm without any filter. The filterless PCD is expected to enhance the use of fluoride thin films in conjunction with VUV light sources for various scientific and industrial applications.

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“…Wide band gap fluoride crystals with band gap energies greater than 6 eV has short emission wavelengths in the VUV region especially when doped with rare earth (RE) ions such as trivalent neodymium (Nd 3+ ) and erbium (Er 3+ ). [4][5][6][7] Photoluminescence from RE-doped fluorophosphate glass scintillators, such as 20Al(PO 3 ) 3 -80LiF (APLF80), have also been reported to have fast nanosecond scintillation decay times and sufficient light yield for neutron detection. [8][9][10][11] Self-trapped exciton (STE) luminescence observed in undoped wide band-gap insulators such as BaF 2 , 12) SrF 2 , 13) CaF 2 14) and their mixed compounds 15,16) also satisfy Eq.…”

Section: Introductionmentioning

confidence: 99%

Investigation of cross luminescence in lanthanum fluoride as a potential fast-response scintillator

Cadatal-Raduban

Yoshikawa

Luong

et al. 2020

Jpn. J. Appl. Phys.

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We report the potential of lanthanum fluoride (LaF3) as a fast-response scintillator. When excited by an extreme ultraviolet free electron laser, neodymium-doped LaF3 (Nd3+:LaF3) exhibited a 1.9 ns fast decay component and a 6.7 ns slow decay component for its 172 nm emission peak. The slow decay component is due to interconfigurational 4f25d-4f3 transition in Nd3+. First principles density functional theory calculations using the Perdew–Burke–Ernzerhof hybrid functional including exact exchange (PBE0) and the Green’s function and screened Coulomb interaction (GW) approximation as implemented in the Vienna Ab initio Simulation Package using plane-wave basis sets within the projector-augmented wave method elucidate the electronic structure of LaF3 and reveal that the fast decay component could be due to partial cross luminescence (CL) from the bottom of the valence band to the top of the outermost core band. The presence of CL alludes to the potential of LaF3 as a fast-response scintillator.

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Micro-pulling down method-grown Er3+:LiCaAlF6 as prospective vacuum ultraviolet laser material

Cited by 23 publications

References 25 publications

Influence of Annealing on Thin Film/Substrate Interface and Vacuum Ultraviolet Photoconductivity of Neodymium Fluoride Thin Films

Influence of Annealing on Thin Film/Substrate Interface and Vacuum Ultraviolet Photoconductivity of Neodymium Fluoride Thin Films

Femtosecond PLD-grown YF₃ nanoparticle thin films as improved filterless VUV photoconductive detectors

Investigation of cross luminescence in lanthanum fluoride as a potential fast-response scintillator

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Micro-pulling down method-grown Er3+:LiCaAlF6 as prospective vacuum ultraviolet laser material

Cited by 23 publications

References 25 publications

Influence of Annealing on Thin Film/Substrate Interface and Vacuum Ultraviolet Photoconductivity of Neodymium Fluoride Thin Films

Influence of Annealing on Thin Film/Substrate Interface and Vacuum Ultraviolet Photoconductivity of Neodymium Fluoride Thin Films

Femtosecond PLD-grown YF3 nanoparticle thin films as improved filterless VUV photoconductive detectors

Investigation of cross luminescence in lanthanum fluoride as a potential fast-response scintillator

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Femtosecond PLD-grown YF₃ nanoparticle thin films as improved filterless VUV photoconductive detectors