Micro-pixellated flip-chip InGaN and AlInGaN light-emitting diodes

Griffin, C.; Zhang, H.X.; Guilhabert, Benoit; Massoubre, David; Gu, Erdan; Dawson, Martin D.

doi:10.1109/cleo.2007.4452512

Cited by 13 publications

(9 citation statements)

References 6 publications

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“…The miniaturized displays that can be accommodated to those market applications need to meet stringent technical requirements that cannot be satisfied by current display technologies such as LCD or OLED. Inorganic micro-LED micro displays [11], [12], [13] are viewed as one of the most promising solutions and has gained considerable traction in recent years. As a self-emissive display technology, micro-LED micro displays are more compact in size, fast in response time and can provide higher contrast ratio and energy efficiency compared with LCD and LCoS technologies.…”

Section: Figure 1: (A)mentioning

confidence: 99%

“…To mass produce the micro-LED micro displays that meet the market need, large-volume, low-cost production method must be developed for the hybridization of micro-LED arrays with Si driver ICs. Although flip-chip technology has been used by various groups [11], [12], [13], [14] for the successful demonstration of AMLED micro displays, the inherent drawbacks of flip-chip technology make it unsuitable for low cost mass production of fine pitch AMLED micro displays.…”

Section: Figure 1: (A)mentioning

confidence: 99%

See 1 more Smart Citation

31.1: Invited Paper: Monochromatic Active Matrix Micro‐LED Micro‐Displays with >5,000 dpi Pixel Density Fabricated using Monolithic Hybrid Integration Process

Zhang¹,

Ou²,

Chong³

et al. 2018

Symp Digest of Tech Papers

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Wafer‐scale epi‐transfer process has been developed for monolithic hybrid integration of Si‐based IC and micro‐LED arrays. Monochromatic red, green, and blue Active‐Matrix micro‐LED (AMmLED) micro‐displays with a resolution of 5000+ PPI were demonstrated for the first time by JBD using this wafer‐scale monolithic hybrid integration technology, which shows feasibility and advantages for low cost mass productions. The brightness of the demonstrated AMμLED micro‐display (green) well exceeds 5x105cd/m2, representing an improvement of over 500‐times compared to the existing self‐emissive micro‐displays. The ultra‐high pixel resolution, high brightness and contrast ratio, low power consumption, and small footprint makes AMμLED micro‐displays highly desirable for various wearable electronics and AR applications.

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Section: Figure 1: (A)mentioning

confidence: 99%

Section: Figure 1: (A)mentioning

confidence: 99%

31.1: Invited Paper: Monochromatic Active Matrix Micro‐LED Micro‐Displays with >5,000 dpi Pixel Density Fabricated using Monolithic Hybrid Integration Process

Zhang¹,

Ou²,

Chong³

et al. 2018

Symp Digest of Tech Papers

View full text Add to dashboard Cite

show abstract

“…Flat panel displays (FDPs) such as liquid crystal displays (LCDs) and organic light emitting diodes (OLEDs) are the major display technologies and dominate the market of TVs, cellphones, desktops/laptops, and wearable devices. While now high pixel per inch (PPI) and high resolution Micro-LED (µLED) displays are attracting more and more attentions, because of its superior properties such as self-emission, high brightness and efficiency, low power consumption, long lifetime, and wide operating environment 1,2,3 . The spontaneous properties of GaN material and devices enable Micro-LED great potential in many applications.…”

Section: Introductionmentioning

confidence: 99%

25.3: Current Driving Active Matrix Micro‐LED Display

Zhang

Liu

Kwok

2018

Symp Digest of Tech Papers

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Micro‐LED display is a quite new technology which has developed only about a decade and been attracting tremendous attention in recent years. It was regarded as a great candidate for many applications, especially a new generation display technology. Here we report a design of active matrix Micro‐LED display including Micro‐LED array fabrication, AM driving circuit and flip‐chip integration. 4T2C (4 transistors and 2 capacitors) driving circuits with a configuration of current control current source (CCCS) was used for better pixels uniformity and display quality.

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“…Recently, micro‐LED displays quickly attract more and more attention because of its superior properties such as self‐emission, high brightness and efficiency, low power consumption, long lifetime, and wide operating environment. The spontaneous properties of GaN material and devices enable micro‐LED great potential in applications that require good visibility and portability for indoor/outdoor displays, long last time of battery, and good robustness in extreme climate such as low/high temperature and air pressure, humidity even outer space radiation . Comparing with mainstream display technologies as OLED and LCD, micro‐LED has its pros and cons.…”

Section: Introductionmentioning

confidence: 99%

“…The spontaneous properties of GaN material and devices enable micro-LED great potential in applications that require good visibility and portability for indoor/outdoor displays, long last time of battery, and good robustness in extreme climate such as low/high temperature and air pressure, humidity even outer space radiation. [2][3][4][5][6] Comparing with mainstream display technologies as OLED and LCD, micro-LED has its pros and cons. From Fig.…”

Section: Introductionmentioning

confidence: 99%

Fully-integrated active matrix programmable UV and blue micro-LED display system-on-panel (SoP)

Zhang

Peng

Lau

et al. 2017

Jnl Soc Info Display

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High pixel per inch and high‐resolution micro‐LED displays are attracting more and more attentions. The increasing pixel number requires a large amount of bonding pads and brings huge difficulties to micro‐LED system design and lowers power efficiency as well. It is urgent to integrate row and column driving circuits onto the micro‐LED panel. Here, we report a fully integrated active matrix programmable micro‐LED system on panel (SoP) with ultraviolet and blue emission wavelengths. The micro‐LED SoP has a resolution of 60 × 60 and pixel pitch of 70 μm. The micro‐LED SoP was achieved by integrating micro‐LED arrays with silicon‐based p‐channel metal‐oxide semiconductor driving panel using fine‐toned flip‐chip bonding technology. With fully integrated scan and data circuits, the number of bonding pads was greatly reduced from 136 to 28, and large amount of metal interconnection lines were saved. The micro‐LED SoP panel was mounted on a periphery driving board, and representative characters were displayed successfully.

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Micro-pixellated flip-chip InGaN and AlInGaN light-emitting diodes

Cited by 13 publications

References 6 publications

31.1: Invited Paper: Monochromatic Active Matrix Micro‐LED Micro‐Displays with >5,000 dpi Pixel Density Fabricated using Monolithic Hybrid Integration Process

31.1: Invited Paper: Monochromatic Active Matrix Micro‐LED Micro‐Displays with >5,000 dpi Pixel Density Fabricated using Monolithic Hybrid Integration Process

25.3: Current Driving Active Matrix Micro‐LED Display

Fully-integrated active matrix programmable UV and blue micro-LED display system-on-panel (SoP)

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