Micro FET pressure sensor manufactured using CMOS-MEMS technique

Dai, Ching‐Liang; Kao, Pin-Hsu; Tai, Yao-Wei; Wu, Chyan-Chyi

doi:10.1016/j.mejo.2007.12.015

Cited by 37 publications

(16 citation statements)

References 22 publications

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“…In this work, we employ complementary metal oxide semiconductor (CMOS)-MEMS technology to fabricate a micromachined RF switch with low actuation voltage of 12 V, and its pull-in voltage is lower than that of Wang et al [4], Angira et al [5], Gao et al [6], Giffney et al [7], Yang et al [8], Park et al [9] and Zheng et al [10]. The use of commercial CMOS process to fabricate MEMS devices is called CMOS-MEMS technology [11][12][13][14]. Micro sensors and actuators manufactured by this technology usually require a post-CMOS process to add functional materials [15][16][17] or to release suspended structures [18][19][20].…”

Section: Introductionmentioning

confidence: 99%

Fabrication of a Micromachined Capacitive Switch Using the CMOS-MEMS Technology

2015

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Abstract:The study investigates the design and fabrication of a micromachined radio frequency (RF) capacitive switch using the complementary metal oxide semiconductor-microelectromechanical system (CMOS-MEMS) technology. The structure of the micromachined switch is composed of a membrane, eight springs, four inductors, and coplanar waveguide (CPW) lines. In order to reduce the actuation voltage of the switch, the springs are designed as low stiffness. The finite element method (FEM) software CoventorWare is used to simulate the actuation voltage and displacement of the switch. The micromachined switch needs a post-CMOS process to release the springs and membrane. A wet etching is employed to etch the sacrificial silicon dioxide layer, and to release the membrane and springs of the switch. Experiments show that the pull-in voltage of the switch is 12 V. The switch has an insertion loss of 0.8 dB at 36 GHz and an isolation of 19 dB at 36 GHz.

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Section: Introductionmentioning

confidence: 99%

Fabrication of a Micromachined Capacitive Switch Using the CMOS-MEMS Technology

2015

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“…Several devices were miniaturized using MEMS technology [4][5][6][7][8]. Microdevices fabricated by this technology have the benefits of small volume, high performance and low cost [9][10][11][12].…”

Section: Introductionmentioning

confidence: 99%

Manufacturing and Characterization of a Thermoelectric Energy Harvester Using the CMOS-MEMS Technology

2015

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Abstract:The fabrication and characterization of a thermoelectric energy harvester using the complementary metal oxide semiconductor (CMOS)-microelectromechanical system (MEMS) technology were presented. The thermoelectric energy harvester is composed of eight circular energy harvesting cells, and each cell consists of 25 thermocouples in series. The thermocouples are made of p-type and n-type polysilicons. The output power of the energy harvester relies on the number of the thermocouples. In order to enhance the output power, the energy harvester increases the thermocouple number per area. The energy harvester requires a post-CMOS process to etch the sacrificial silicon dioxide layer and the silicon substrate to release the suspended structures of hot part. The experimental results show that the energy harvester has an output voltage per area of 0.178 mV¨mm´2¨K´1 and a power factor of 1.47ˆ10´3 pW¨mm´2¨K´2.

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“…Various microactuators and microsensors developed by the CMOS process are called CMOS-MEMS technique [ 19 , 20 , 21 , 22 ]. Usually, micro devices fabricated by the technique require a post-CMOS process to add the functional materials [ 23 , 24 ] and to release the suspended structures [ 25 , 26 , 27 ].…”

Section: Introductionmentioning

confidence: 99%

Fabrication and Characterization of a Micro Methanol Sensor Using the CMOS-MEMS Technique

Fong

Dai

2015

Sensors

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A methanol microsensor integrated with a micro heater manufactured using the complementary metal oxide semiconductor (CMOS)-microelectromechanical system (MEMS) technique was presented. The sensor has a capability of detecting low concentration methanol gas. Structure of the sensor is composed of interdigitated electrodes, a sensitive film and a heater. The heater located under the interdigitated electrodes is utilized to provide a working temperature to the sensitive film. The sensitive film prepared by the sol-gel method is tin dioxide doped cadmium sulfide, which is deposited on the interdigitated electrodes. To obtain the suspended structure and deposit the sensitive film, the sensor needs a post-CMOS process to etch the sacrificial silicon dioxide layer and silicon substrate. The methanol senor is a resistive type. A readout circuit converts the resistance variation of the sensor into the output voltage. The experimental results show that the methanol sensor has a sensitivity of 0.18 V/ppm.

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Micro FET pressure sensor manufactured using CMOS-MEMS technique

Cited by 37 publications

References 22 publications

Fabrication of a Micromachined Capacitive Switch Using the CMOS-MEMS Technology

Fabrication of a Micromachined Capacitive Switch Using the CMOS-MEMS Technology

Manufacturing and Characterization of a Thermoelectric Energy Harvester Using the CMOS-MEMS Technology

Fabrication and Characterization of a Micro Methanol Sensor Using the CMOS-MEMS Technique

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