Micro-Fabricated Resonator Based on Inscribing a Meandered-Line Coupling Capacitor in an Air-Bridged Circular Spiral Inductor

Abstract

This letter presents a high-performance micro-fabricated resonator based on inscribing a meandered-line square coupling capacitor in an air-bridged circular spiral inductor on the GaAs-integrated passive device (IPD) technology. The main advantages of the proposed method, which inserts a highly effective coupling capacitor between the two halves of a circular spiral inductor, are the miniaturized size, enhanced coupling coefficient, and improved selectivity. Moreover, using an air-bridge structure utilizes the enhanced mutual inductance in which it maximizes the self-inductance by a stacking inductor layout to obtain a high coupling effect. The simulated and measured S-parameters of a prototype resonator with an effective overall circuit size of 1000 µm × 800 µm are in good agreement. The measured insertion and return losses of 0.41 and 24.21 dB, respectively, at a measured central frequency of 1.627 GHz, as well as an upper band transmission zero with a suppression level of 38.7 dB, indicate the excellent selectivity of the developed resonator.

Design and Realization of a Compact High-Frequency Band-Pass Filter with Low Insertion Loss Based on a Combination of a Circular-Shaped Spiral Inductor, Spiral Capacitor and Interdigital Capacitor

“…R denotes the resistance loss of the circular intertwined spiral inductor of inductance (L) with the substrate-related parameters COX, CSUB and RSUB. Csc and Rsc denote the coupling capacitance and loss resistance of the spiral capacitor [12,13].…”

Fabrication of QFN-Packaged Miniaturized GaAs-Based Bandpass Filter with Intertwined Inductors and Dendritic Capacitor

“…The IPD has the advantages of being a simplified model, having a reduced size, and enhanced performance, benefiting from the reduction of parasitic effects compared with standard discrete systems [8,9]. Moreover, the Q-factor used to evaluate device performances is low for lumped elements but can be enhanced using IPD technology as reported in our previous studies [10][11][12]. GaAs substrates have become the second most important semiconductor materials owing to their high saturated electron drift velocity, low field mobility, low parasitics, and good interdevice isolation.…”

A High-Frequency-Compatible Miniaturized Bandpass Filter with Air-Bridge Structures Using GaAs-Based Integrated Passive Device Technology

“…Apart from the perfection, the SBS-based device is hard to be monolithically integrated with other on-chip photodetectors and electro-optic modulators [ 14 , 15 , 16 ]. In general, lumped elements have a lower Q value (for CMOS, Q factor is less than 15) [ 17 , 18 ]; to some extent, this problem can be mitigated by implementing integrated passive device (IPD) technology (Q factor >30), as is described in our previous reports [ 19 , 20 , 21 , 22 ]. Integrated passive device technology employs a newly developed fabrication technique that achieves the desired trade-off for package integration systems and affords complete module solutions; thus, overall improved system performance can be achieved through integration with other functionalities.…”