Micro- and nano-domain engineering in lithium niobate

Shur, V. Ya.; Ахматханов, А. Р.; Батурин, И. С.

doi:10.1063/1.4928591

Cited by 189 publications

(90 citation statements)

References 212 publications

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“…Although many techniques of micro-or nano-domain engineering have been demonstrated [42], the most common and effective way to reverse the material spontaneous polarization consists in applying an intense electric field (typical voltage ∼ 21 kV.mm −1 for LN) through the crystal as schematically represented in FIG. 4.…”

Section: Nonlinear Interactions Using Pplnmentioning

confidence: 99%

Quantum photonics at telecom wavelengths based on lithium niobate waveguides

Alibart¹,

D’Auria²,

Micheli³

et al. 2016

J. Opt.

161

116

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Integrated optical components on lithium niobate play a major role in standard high-speed communication systems. Over the last two decades, after the birth and positioning of quantum information science, lithium niobate waveguide architectures have emerged as one of the key platforms for enabling photonics quantum technologies. Due to mature technological processes for waveguide structure integration, as well as inherent and efficient properties for nonlinear optical effects, lithium niobate devices are nowadays at the heart of many photon-pair or triplet sources, single-photon detectors, coherent wavelength-conversion interfaces, and quantum memories. Consequently, they find applications in advanced and complex quantum communication systems, where compactness, stability, efficiency, and interconnectability with other guided-wave technologies are required. In this review paper, we first introduce the material aspects of lithium niobate, and subsequently discuss all of the above mentioned quantum components, ranging from standard photon-pair sources to more complex and advanced circuits.

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Section: Nonlinear Interactions Using Pplnmentioning

confidence: 99%

Quantum photonics at telecom wavelengths based on lithium niobate waveguides

Alibart¹,

D’Auria²,

Micheli³

et al. 2016

J. Opt.

161

116

View full text Add to dashboard Cite

show abstract

“…This allows a noncontact direct‐write technique for ferroelectrics as demonstrated in Figure d. As subsequent switching of the irradiated areas is exceedingly difficult; this is a method to produce nanoscale domain arrays that are extremely stable and unchangeable under applied bias (Figure S3, Supporting Information), which might be desirable for some applications such as electro‐optics or photonics …”

Section: Resultsmentioning

confidence: 99%

Nanoscale Defect Engineering and the Resulting Effects on Domain Wall Dynamics in Ferroelectric Thin Films

McGilly

Sandu

Feigl

et al. 2017

Adv Funct Materials

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Defect engineering is one of the cornerstones of the modern electronics industry. Almost all electronic devices include materials that have been doped by ion bombardment. For materials where crystallinity is essential, such as ferroelectrics, defect type and concentration can vastly influence properties and are often used to optimize device performance. This study shows a method to effectively control the density and position on the nanoscale of defect sites in thin films of Pb(Zr,Ti)O3 via focused ion beam microscopy. This allows for exceptional clarity of observation of the role of defects in nucleation, polarization switching, and domain wall interaction through investigation with piezoresponse force microscopy and transmission electron microscopy, adding insight to accepted but seldom‐demonstrated facts on defect‐induced effects. This nanoscale defect engineering can be used as a tool to control material properties, and furthermore, a route is demonstrated toward a practical application.

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“…The domain broadening outside the electrodes leading to formation of the domain streamers can be easily detected by the analysis of the switching current shape as it was shown in the present paper. Thus, the proposed approach will be used for optimization of the periodical poling in KTP on the way to creation of sub-micron domain structures desired for frequency converters and electro-optic modulators with enhanced characteristics [41]. …”

Section: Discussionmentioning

confidence: 99%

Analysis of Switching Current Data during Polarization Reversal in KTP Single Crystals with Surface Dielectric Layer

et al. 2018

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Studies of polarization reversal processes in potassium titanyl phosphate (KTiOPO 4 , KTP) single crystals with surface dielectric layer are important due to their potential applications as the basis of bottom-up technology for creation of periodically poled nonlinear-optical crystals. We present the results of switching currents analysis accompanied by in situ visualization of domain kinetics during polarization reversal in KTP with 3 m-thick photoresist dielectric layer. Qualitative change of the switching current shape has been revealed as compared to the polarization reversal without surface dielectric layer. Two stages of domain structure evolution have been distinguished by in situ visualization of domain kinetics. The formation of submicron domain streamers in front of the moving domain walls has been revealed. The broadening of the domain streamers (1D domain growth) was observed at the second stage. The switching currents were approximated by the modified Kolmogorov-Avrami formula taking into account the change of the growth dimensionality ("geometrical catastrophe"). The sufficient input of the 1D growth to the switching process decreased with increase of the switching field. The obtained results were attributed to the domain wall shape instability induced by retardation of the depolarization field screening in ferroelectric with surface dielectric layer.

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Micro- and nano-domain engineering in lithium niobate

Cited by 189 publications

References 212 publications

Quantum photonics at telecom wavelengths based on lithium niobate waveguides

Quantum photonics at telecom wavelengths based on lithium niobate waveguides

Nanoscale Defect Engineering and the Resulting Effects on Domain Wall Dynamics in Ferroelectric Thin Films

Analysis of Switching Current Data during Polarization Reversal in KTP Single Crystals with Surface Dielectric Layer

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