MHz Repetition Frequency, Hundreds Kilowatt, and Sub-Nanosecond Agile Pulse Generation Based on Linear 4H-SiC Photoconductive Semiconductor

Chu, Xu; Liu, Jinliang; Xun, Tao; Wang, Langning; Yang, Hanwu; He, Juntao; Zhang, Jun

doi:10.1109/ted.2021.3138950

Cited by 25 publications

(12 citation statements)

References 32 publications

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“…In recent years, with the development of SiC power semiconductor device technology, SiC pulse power switching devices with higher voltage resistance, faster switching speed, stronger temperature resistance and smaller volume have become the focus of research in the field of pulse power switching technology [3,4]. Compared with electrically controlled power devices, SiC light triggered thyristor (LTT), SiC photo-conductive switch (PCSS), SiC optically controlled transistor (OCT) and other optically controlled pulse power switching devices have unique advantages in simplified driving circuit and improved antielectromagnetic interference ability [5][6][7]. Which further improve the application potential of optically controlled power devices in national defense and industrial fields [5,7].…”

Section: Introductionmentioning

confidence: 99%

“…Compared with electrically controlled power devices, SiC light triggered thyristor (LTT), SiC photo-conductive switch (PCSS), SiC optically controlled transistor (OCT) and other optically controlled pulse power switching devices have unique advantages in simplified driving circuit and improved antielectromagnetic interference ability [5][6][7]. Which further improve the application potential of optically controlled power devices in national defense and industrial fields [5,7]. Compared with SiC PCSS, SiC LTT and SiC OCT have the advantages of low leakage and high gain, and can achieve lower power loss as a pulse power switch [6][7][8].…”

Section: Introductionmentioning

confidence: 99%

“…Which further improve the application potential of optically controlled power devices in national defense and industrial fields [5,7]. Compared with SiC PCSS, SiC LTT and SiC OCT have the advantages of low leakage and high gain, and can achieve lower power loss as a pulse power switch [6][7][8]. Compared with SiC LTT, SiC OCT has controllable turn-off characteristics and can be used as a pulse power switch to achieve a high repetition rate pulse switch [6,8].…”

Section: Introductionmentioning

confidence: 99%

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Investigation and Improvement of Switching Characteristics of SiC Optically Controlled Transistor

Zhang

2022

J. Phys.: Conf. Ser.

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Aiming to the switching characteristics of SiC optically controlled transistor, SiC NPN optically controlled transistor was investigated through Silvaco TCAD. The results show that under 4500V bias voltage, the turn-on and turn-off dV/dt of the SiC transistor are 428.5V/ns and 23.9V/ns, respectively. And the tailing problem in the turn-off process is obvious. In order to improve the switching characteristics of SiC optically controlled transistor, the minority carrier lifetime in base layer is regional controlled. The simulation results indicate that, by using minority carrier lifetime control technology, the turn-off time and turn-off dV/dt are improved by about 28.2% and 39.3%, respectively. Meanwhile, turn-on time and turn-on dV/dt are only degenerated by about 3.6% and 3.4%, respectively. The overall level of switching characteristics of SiC optically controlled transistor are improved.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Investigation and Improvement of Switching Characteristics of SiC Optically Controlled Transistor

Zhang

2022

J. Phys.: Conf. Ser.

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“…Accordingly, the extrinsic vanadium‐compensated 4H‐SiC may be stimulated by Nd: YAG laser at 1064 nm wavelength. In previous studies, the ability of 4H‐SiC PCSS to generate MHz repetition frequency sub‐nanosecond pulses have been reported [10]. However, the current viewing resistance (CVR) had been used to measure the photocurrent in the MHz response circuit in [10].…”

Section: Introductionmentioning

confidence: 99%

“…In previous studies, the ability of 4H‐SiC PCSS to generate MHz repetition frequency sub‐nanosecond pulses have been reported [10]. However, the current viewing resistance (CVR) had been used to measure the photocurrent in the MHz response circuit in [10]. Thus, the signal could not be radiated directly through a UWB antenna.…”

Section: Introductionmentioning

confidence: 99%

4H‐SiC photoconductive semiconductor based ultra‐wideband microwave generation with MHz tunable repetition rate

Chu

Xun

Wang

et al. 2022

Electronics Letters

Self Cite

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Use of the vanadium-compensated semi-insulating (VCSI) 4H-SiC photoconductive semiconductor switch (PCSS) for the generation of an ultra-wideband (UWB) microwave with MHz tunable re-frequency is demonstrated. To evaluate the impact of device architectures on performance, a 4H-SiC-based photoconductive semiconductor switch was manufactured and was evaluated using a laser cluster driver with a configurable optical pulse re-frequency. The 1.5 mm-thick 4H-SiC PCSS was found to operate with an electric field up to 20 kV and a photocurrent of 20.7 A. The fabricated ultra-wideband microwave system could generate ultrahigh repetition frequency pulses from 0.5 to 2.0 MHz. Simulation of the UWB antenna system was carried out to examine the radiation field. The peak radiation electric-field factor (rE) of a singleunit UWB microwave generation system can reach 17 kV.

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High-energy and high-peak-power GHz burst-mode all-fiber laser with a uniform envelope and tunable intra-burst pulses

Liu

Zhang

et al. 2023

High Pow Laser Sci Eng

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We report a Yb-doped all-fiber laser system generating burst-mode pulses with high energy and high peak power at a GHz intra-burst repetition rate. To acquire the uniform burst envelope, a double-pre-compensation structure with an arbitrary waveform laser diode driver and an acoustic optical modulator is utilized for the first time. The synchronous pumping is utilized for the system to reduce the burst repetition rate to 100 Hz and suppress the amplified spontaneous emission effect. By adjusting the gain of every stage, uniform envelopes with different output energies can be easily obtained. The intra-burst repetition rate can be tuned from 0.5 to 10 GHz actively modulated by an electro-optic modulator. Optimized by timing control of eight channels of analog signal and amplified by seven stages of Yb-doped fiber amplifier, the pulse energy achieves 13.3 mJ at 0.5 ns intra-burst pulse duration, and the maximum peak power reaches approximately 3.6 MW at 48 ps intra-burst pulse duration. To the best of our knowledge, for reported burst-mode all-fiber lasers, this is a record for output energy and peak power with nanosecond-level burst duration, and the widest tuning range of the intra-burst repetition rate. In particular, this flexibly tunable burst-mode laser system can be directly applied to generate high-power frequency-tunable microwaves.

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MHz Repetition Frequency, Hundreds Kilowatt, and Sub-Nanosecond Agile Pulse Generation Based on Linear 4H-SiC Photoconductive Semiconductor

Cited by 25 publications

References 32 publications

Investigation and Improvement of Switching Characteristics of SiC Optically Controlled Transistor

Investigation and Improvement of Switching Characteristics of SiC Optically Controlled Transistor

4H‐SiC photoconductive semiconductor based ultra‐wideband microwave generation with MHz tunable repetition rate

High-energy and high-peak-power GHz burst-mode all-fiber laser with a uniform envelope and tunable intra-burst pulses

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