MgZnO Nanoparticle-Based Metal–Semiconductor–Metal UV Photodetector

Giri, Pushpa

doi:10.1007/s11664-022-09445-6

Cited by 10 publications

(2 citation statements)

References 37 publications

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“…Furthermore, Mg x Zn 1−x O/ZnO quantum wells (QWs) could induce high concentrations of two dimensional electron gas (2DEG) to improve the deep UV response and the UV/visible rejection ratio which is six times larger than that from the one without 2DEG [15]. Meanwhile the higher charge carrier density in MgZnO also enhances the light trapping probability as well [16].…”

Section: Introductionmentioning

confidence: 99%

Optical absorption of electron inter-band transitions in asymmetric Mg_xZn_1−xO/ZnO/Mg_yZn_1−yO quantum wells with mixed phases

Zan,

Ban

2023

Phys. Scr.

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The inter-band optical absorption of electron transitions in asymmetric Mg x Zn1−x O/ZnO/Mg y Zn1−y O quantum wells (QWs), which are the prime functional units of multi-color ultraviolet photodetectors (UVPDs), is investigated with the consideration of mixed phases (0.37 < x(y) < 0.62) by using the density matrix method combined with a weight model. Our results show that the intensity and number of absorption peaks can be modulated by controlling the Mg composition x in single or mixed phases with a given y in mixed phases. The single peak or dual absorption peaks will appear for x being in a single phase. While x is in the mixed phases, at most three observable peaks can be observed to instruct the designation of multi-color UVPDs. Meanwhile, the size dependence of the left barrier and well in the QWs is also discussed. It is shown that relative wider left barrier and narrower well is more beneficial to obtain multi-detectable absorption peaks for photodetectors.

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Section: Introductionmentioning

confidence: 99%

Optical absorption of electron inter-band transitions in asymmetric Mg_xZn_1−xO/ZnO/Mg_yZn_1−yO quantum wells with mixed phases

Zan,

Ban

2023

Phys. Scr.

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“…Because light with a wavelength range of 200–280 nm is absorbed by the ozone layer, detectors that are sensitive to wavelengths below 280 nm are called solar-blind photodetectors (SBPDs) . Owing to a low false alarm rate in SBPDs, they are crucial in military and civil fields, such as missile tracking, flame detection, solar-blind imaging, space communication, navigational positioning, and other related applications. , Recently, various wide bandgap semiconductors, such as AlGaN, MgZnO, Ga 2 O 3 , SiC, and diamond, have been used to fabricate SBPDs. Of these materials, diamond has attracted much attention due to its ultrawide bandgap (5.5 eV), excellent radiation hardness, high carrier mobility, and high thermal conductivity. ,, …”

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confidence: 99%

High-Performance Diamond Phototransistor with Gate Controllable Gain and Speed

et al. 2023

J. Phys. Chem. Lett.

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This paper presents a fabricated solar-blind phototransistor based on hydrogen-terminated diamond. The phototransistor shows a large photocurrent and enhancement of responsivity over conventional two-terminal diamond-based photodetector. These enhancement effects are owing to the internal gain of the phototransistor. The fabricated phototransistor exhibits a high photoresponsivity (R) of 2.16 × 10 4 A/W and a detectivity (D*) of 9.63 × 10 11 jones, with gate voltage (V G ) and drain voltage of approximately −1.5 V and −5 V, respectively, under 213 nm light illumination. Even at ultralow operating voltage of −0.01 V, the device records satisfactory performance with R and D* of 146.7 A/W and 6.19 × 10 10 jones, respectively. By adjusting the V G , photocurrent generation in the device can be continuously tuned from the fast photoconductive effect to the optical gating effect with high optical gain. When V G increases from 1.4 to 2.4 V, the decay time decreases from 1512.0 to 25.5 ms. Therefore, responsivity, dark current, I photo /I dark , and decay time of the device can be well tuned by V G .

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FGMOS and QFGMOS-Based Super-Wilson Current Mirror and Its Application in Full-Wave Rectifier

Bhardwaj

Kumar

Srivastava³

2023

Lecture Notes in Electrical Engineering

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MgZnO Nanoparticle-Based Metal–Semiconductor–Metal UV Photodetector

Cited by 10 publications

References 37 publications

Optical absorption of electron inter-band transitions in asymmetric Mg_xZn_1−xO/ZnO/Mg_yZn_1−yO quantum wells with mixed phases

Optical absorption of electron inter-band transitions in asymmetric Mg_xZn_1−xO/ZnO/Mg_yZn_1−yO quantum wells with mixed phases

High-Performance Diamond Phototransistor with Gate Controllable Gain and Speed

FGMOS and QFGMOS-Based Super-Wilson Current Mirror and Its Application in Full-Wave Rectifier

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MgZnO Nanoparticle-Based Metal–Semiconductor–Metal UV Photodetector

Cited by 10 publications

References 37 publications

Optical absorption of electron inter-band transitions in asymmetric Mg x Zn1−x O/ZnO/Mg y Zn1−y O quantum wells with mixed phases

Optical absorption of electron inter-band transitions in asymmetric Mg x Zn1−x O/ZnO/Mg y Zn1−y O quantum wells with mixed phases

High-Performance Diamond Phototransistor with Gate Controllable Gain and Speed

FGMOS and QFGMOS-Based Super-Wilson Current Mirror and Its Application in Full-Wave Rectifier

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Product

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Optical absorption of electron inter-band transitions in asymmetric Mg_xZn_1−xO/ZnO/Mg_yZn_1−yO quantum wells with mixed phases

Optical absorption of electron inter-band transitions in asymmetric Mg_xZn_1−xO/ZnO/Mg_yZn_1−yO quantum wells with mixed phases