2008
DOI: 10.1134/s1054660x08070013
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MgO:LiNbO3 planar waveguide formed by MeV O2+ implantation and its annealing characteristics

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Cited by 5 publications
(5 citation statements)
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“…From RBS/C spectra for samples implanted with fluences ranging from 5 × 10 13 to 1 × 10 15 cm −2 the authors determined threshold values for the amorphization and the associated electronic stopping power. Similar studies have also been performed for H [318], O [111,[319][320][321] and F [116].…”
Section: Ion Implantationsupporting
confidence: 62%
“…From RBS/C spectra for samples implanted with fluences ranging from 5 × 10 13 to 1 × 10 15 cm −2 the authors determined threshold values for the amorphization and the associated electronic stopping power. Similar studies have also been performed for H [318], O [111,[319][320][321] and F [116].…”
Section: Ion Implantationsupporting
confidence: 62%
“…From RBS/C spectra for samples implanted with fluences ranging from 5 × 10 13 to 1 × 10 15 cm −2 the authors determined threshold values for the amorphization and the associated electronic stopping power. Similar studies have also been performed for H [318], O [111,[319][320][321] and F [116].…”
Section: Ion Implantationsupporting
confidence: 55%
“…Nd:MgO:LiNbO 3 -ion-implanted planar structure, pumped by Ti:Sapphire laser, was tested in 1991 [49]. Ion implanted Mg:LiNbO 3 is promising material for THz generation [50].…”
Section: Oxides -Litao 3 Lpn Linbomentioning
confidence: 99%