MgO-based tunnel junction material for high-speed toggle magnetic random access memory

Dave, R. W.; Steiner, G.; Slaughter, J. M.; Sun, J. J.; Craigo, B.; Pietambaram, Srinivas V.; Smith, K.; Grynkewich, G.; DeHerrera, M.; Åkerman, Johan; Tehrani, S.

doi:10.1109/tmag.2006.877743

Cited by 77 publications

(29 citation statements)

References 8 publications

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“…16 Pillars were defined using electron-beam lithography with MAN2403 negative resist and patterned by argon ion milling ͑500 V, 40 mA, 22.5°for 4.5 min͒ down to the Ta back electrode. The resist was then removed using oxygen plasma.…”

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confidence: 99%

Spin transfer torque switching of magnetic tunnel junctions using a conductive atomic force microscope

Evarts

Cao

Ricketts

et al. 2009

Applied Physics Letters

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We show that a nonmagnetic conductive atomic force microscopy probe can be used to read and write magnetic bits using current passed between the tip and bit. The bits were patterned using electron beam lithography from a magnetic tunnel junction ͑MTJ͒ film with in-plane shape anisotropy using an MgO tunnel barrier. Probes were made having a thick Pt coating and could deliver up to several milliamps, so that MTJ structures were easily switched repeatedly using the spin transfer torque effect. © 2009 American Institute of Physics. ͓doi:10.1063/1.3240884͔The ability to switch the magnetization of a nanomagnet using current has tremendous implications for data storage and logic applications. Early work on magnetization reversal using spin transfer torque ͑STT͒ studied effects in metallic spin-valve structures with resistance changes of milliohms; 1 however, the same effect with larger resistance changes has been observed in magnetic tunnel junction ͑MTJ͒ structures.

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confidence: 99%

Spin transfer torque switching of magnetic tunnel junctions using a conductive atomic force microscope

Evarts

Cao

Ricketts

et al. 2009

Applied Physics Letters

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“…Another possibility for the preparation of the smooth defect-free MgO layer would be the Mg deposition followed by an oxidation step and post annealing. This process in combination with the plasma oxidation was recently shown to deliver better quality tunneling barriers in the MgO-based MTJs [22].…”

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confidence: 99%

Growth and morphology of the epitaxial Fe(1 1 0)/MgO(1 1 1)/Fe(1 1 0) Trilayers

et al. 2007

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Growth and surface morphology of epitaxial Fe(1 1 0)/MgO(1 1 1)/Fe(1 1 0) trilayers constituting a magnetic tunnel junction were investigated by low-energy electron diffraction (LEED) and scanning tunneling microscopy (STM). STM reveals a grain-like growth mode of MgO on Fe(1 1 0) resulting in dense MgO(1 1 1) films at room temperature as well as at 250°C. As observed by STM, initial deposition of MgO leads to a partial oxidation of the Fe(1 1 0) surface which is confirmed by Auger electron spectroscopy. The top Fe layer deposited on MgO(1 1 1) at room temperature is relatively rough consisting of clusters which can be transformed by annealing to an atomically flat epitaxial Fe(1 1 0) film.

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“…On the other hand, one must assure that a pre-defined BEOL thermal budget should not negatively affect the attributes of MTJs. For example, a synthetic antiferromagnet (SAF) structure with a typical Ru spacer may not have sufficient thermal endurance to sustain BEOL thermal processes [30], [31]. In addition, interdiffusion between the free layer and the capping layer can degrade the properties of the free layer [32].…”

Section: Mtj Thermal Budgetsmentioning

confidence: 99%