“MgAlON” spinel structure: A new crystallographic model of solid solution as suggested by solid state NMR

Morey, O.; Goeuriot, Patrice

doi:10.1016/j.jeurceramsoc.2004.01.023

Cited by 26 publications

(11 citation statements)

References 12 publications

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“…27 Al Solid-State NMR Spectroscopy. 27 Al MAS NMR spectroscopy is an extremely sensitive probe of the coordination environment of aluminum and can provide an excellent means to investigate the site occupancy of Al 3+ cations. , Octahedral Al 3+ ions give resonance with chemical shifts in the range −20 to 10 ppm, while those for tetrahedral Al 3+ centers occur between 50 and 80 ppm . ZnAl 2 O 4 spinel, which has a face-centered cubic oxide lattice with two lattice sites available for cation occupancy, may be written as (Zn 1- γ Al γ )[Zn γ Al 2- γ ]O 4 , where the round and square brackets denote cation sites with tetrahedral and octahedral coordination, respectively, and γ represents the degree of inversion.…”

Section: Resultsmentioning

confidence: 99%

Self-generated Template Pathway to High-Surface-Area Zinc Aluminate Spinel with Mesopore Network from a Single-Source Inorganic Precursor

et al. 2006

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Zinc aluminate spinels (ZnAl 2 O 4 ) with mesopore networks and unusually high specific surface areas have been prepared through a self-generated template pathway using a single-source Zn-Al layered double hydroxide as precursor. This strategy involves calcination of the molecular precursor at 500 °C or above, followed by selective leaching of the self-generated zinc oxide template from the resultant calcined products. The specific surface area of ZnAl 2 O 4 obtained after calcination at 500 °C is as high as 253 m 2 g -1 and then decreases gradually with calcination temperature. The templating effect of selfgenerated ZnO is the essential factor directing the formation of the present high-surface-area ZnAl 2 O 4 spinels with interconnected mesopore networks. Since the precursor has a uniform distribution of metal cations on an atomic level, the formation of spinel requires a low temperature and short calcination time. Further, through photocatalytic investigation, these as-prepared ZnAl 2 O 4 spinels displayed better abilities to photodecompose phenol under UV irradiation due to their higher surface areas structure, compared to ZnAl 2 O 4 sample prepared by the conventional solid-state method.

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Section: Resultsmentioning

confidence: 99%

Self-generated Template Pathway to High-Surface-Area Zinc Aluminate Spinel with Mesopore Network from a Single-Source Inorganic Precursor

et al. 2006

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“…In particular, the two cations (say, A and B) can mix, so that the composition with respect to one unit cell can become (A 8 [22,23], etc. MgAlON [24] is an oxynitride material having spinel structure. Example of binary nonoxide spinel material includes γ-Ge 3 N 4 , Co 3 O 4 (sometimes written as CoCo 2 O 4 ), etc.…”

Section: Spinel Materialsmentioning

confidence: 99%

Reactive SputteredWide-Bandgap p-Type Semiconducting Spinel AB2O4 and Delafossite ABO2 Thin Films for “Transparent Electronics”

Banerjee¹,

Chattopadhyay

2008

Reactive Sputter Deposition

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Reactive sputtering is one of the most widely used techniques for preparing compound thin films (such as oxides, nitrides, carbides, etc.) by sputtering metal targets in an active gas atmosphere (Ar + O 2 /N 2 /CH 4 , etc.) [1][2][3][4]. In this chapter, we have discussed, in details, the formation of spinel and delafossite materials of the form AB 2 O 4 and ABO 2 (A and B may be monovalent, divalent, trivalent, or tetravalent cations, depending on the crystal structure, described later) by reactive sputtering technique. Specially, wide bandgap, ptype semiconducting, and transparent oxide materials with delafossite and spinel structure, having interesting applications in "Transparent Electronics," have been discussed in details. In Sects. 12.2-12.5, a detailed review on the structural, optical, and electrical properties of these p-type transparent conducting oxides (p-TCOs), deposited by reactive sputtering technique, has been presented and the origin of p-type conductivity of these materials has been discussed with considerable attention. Most of the results presented in these sections are reported by various authors working on this field. In Sect. 12.6, synthesis and electro-optical characterization of one of the very important delafossite, p-type semiconducting, and wide-bandgap material, such as CuAlO 2 , produced by our group via reactive sputtering technique, have been discussed in details. Detailed discussions on spinel-and delafossitestructured material can be found in various literatures [5][6][7][8][9][10][11][12][13][14]. Also, detailed reviews on the p-TCO materials have been published by us and others [15][16][17], which cover the syntheses and properties of a range of p-TCO materials reported so far.

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“…It is commonly accepted that aluminum has a range of local tetrahedral and octahedral environments, including mixed anion (ie, nitrogen and oxygen) coordinations in AlON. [26][27][28] Here, the 27 Figure 7A indicated the presence of [AlN 4 ], which is the main coordination structure in AlN. However, the [AlN 4 ] peak at 114 ppm was not found in Wang's qualitative solid-state NMR study for AlON powder.…”

Section: Resultsmentioning

confidence: 88%

“…For the original powder (Figure 7A), there were five peaks centered at 114, 71.3, 65, 14.6, and 11 ppm, respectively. It is commonly accepted that aluminum has a range of local tetrahedral and octahedral environments, including mixed anion (ie, nitrogen and oxygen) coordinations in AlON 26‐28 . Here, the 27 Al MAS NMR spectra of AlON were dominated by a sharp Al‐O resonance at δ = 14.6 ppm corresponding to the structural units of [AlO 6 ], and the shoulder peak at 11 ppm, which is adjacent to [AlO 6 ], should be assigned to [AlO 5 N] 29 .…”

Section: Resultsmentioning

confidence: 92%

Oxidation behavior and mechanism of aluminum oxynitride (AlON) at elevated temperatures

Yang

Chen

et al. 2020

J. Am. Ceram. Soc.

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The oxidation behavior and mechanism of aluminum oxynitride (AlON) powder exposed to air at elevated temperatures between 800°C and 1300°C was investigated by X-ray diffractometry (XRD), scanning electron microscope (SEM), electron spin resonance (ESR), nuclear magnetic resonance (NMR), and simultaneous thermogravimetry, differential thermal analysis, and mass spectrometry techniques (TG-DTA-MS). The weight of AlON gradually increases to a maximum value at 1150°C and then decreases with further heating. Meanwhile, AlON powder undergoes chemical changes, as evidenced by lattice expansion, and turns eventually into alumina. ESR spectra reveal the occurrence of lone pair electrons in the oxidized products and the intensity of corresponding resonance signal increases before disappearing with the increase in temperature. Combined with the results of NMR and TG-DTA-MS, the measured data suggest that Al-N in [AlO 3 N] tetrahedron and [AlO 5 N] octahedron are gradually oxidized into Al-ON group with lone pair electrons, which causes continuous weight gain and lattice expansion. Further oxidation at higher temperatures results in alumina and N 2 .

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“MgAlON” spinel structure: A new crystallographic model of solid solution as suggested by solid state NMR

Cited by 26 publications

References 12 publications

Self-generated Template Pathway to High-Surface-Area Zinc Aluminate Spinel with Mesopore Network from a Single-Source Inorganic Precursor

Self-generated Template Pathway to High-Surface-Area Zinc Aluminate Spinel with Mesopore Network from a Single-Source Inorganic Precursor

Reactive SputteredWide-Bandgap p-Type Semiconducting Spinel AB2O4 and Delafossite ABO2 Thin Films for “Transparent Electronics”

Oxidation behavior and mechanism of aluminum oxynitride (AlON) at elevated temperatures

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