“…As a result, the b-SS/Fe 3 O 4 /Si/Mg 2 Si/CaSi 2 prototype HSC was found to possess the highest PV performance with a PCE of 7.5%, J sc = 25.97 mA/cm 2 , FF = 55.9% and V oc = 0.477 V, thus, confirming the feasibility of the proposed approach of the direct integration of black solar light absorbers with textured back reflectors without any isolation layers for preventing uncontrolled diffusion and other accompanying issues. The PCE achieved for the black Si/Mg 2 Si tandem not only demonstrates a 30-fold increase in PV performance compared with its flat counterpart [ 29 ], but also keeps pace with other state-of-the-art SCs fabricated on other construction-compatible substrate materials. Moreover, the b-SS/Fe 3 O 4 /Si templates that were also used in the current study create an opportunity for a simple, low-cost approach for the fabrication of substrate-supported black Si structures for flexible and other feasible applications.…”
Section: Resultsmentioning
confidence: 89%
“…On one hand, Mg 2 Si possesses outstanding optoelectronic properties to be applied as a VIS-NIR light absorber and photodetector with high Si-compatibility [ 46 , 47 , 48 , 49 , 50 , 51 ]. On the other hand, we have already demonstrated that silicidation of the textured Si surface such as b-Si with magnesium resulted in a new wide band optical absorber called “black silicide” [ 29 ], demonstrating a very high PV potential. Thus, it seemed natural to extend this paradigm beyond b-Si substrates towards more cost-efficient ones, such as b-SS/Fe 3 O 4 /Si, considered in the present study.…”
Section: Resultsmentioning
confidence: 99%
“…The resultant SS/Fe 3 O 4 /Si templates demonstrated competitive antireflection properties without needing to deposit any intermediate layers. In addition, we further exploited our concepts of the black silicide [ 29 ], which deals with semiconducting magnesium silicide (Mg 2 Si) formation atop a textured Si surface, and optically transparent calcium disilicide (CaSi 2 ) [ 30 ] that acts as a top electrode, to demonstrate a prototype Si-silicide heterojunction solar cell (HSC) with the black-SS/Fe 3 O 4 /Si/Mg 2 Si/CaSi 2 structure. The former concept is devoted to the silicidation of the Si surface textures, which results in the preservation of the original morphology, while providing unprecedented near-infrared (NIR) antireflection performance.…”
This paper reports on a facile bottom-up method for the direct integration of a silicon (Si)-magnesium silicide (Mg2Si) heterojunction solar cell (HSC) with a textured rear reflector made of stainless steel (SS). Modified wet chemical etching and post processing of SS substrates resulted in the formation of both a rough surface texture and diffusion barrier layer, consisting of magnetite (Fe3O4) with reduced optical reflection. Then, Si, Mg2Si and CaSi2 layers were stepwise thermally evaporated onto the textured SS surface. No traces of Fe and Cr silicide phases were detected by Raman spectroscopy, confirming effective suppression of impurity diffusion from the SS to the upper layers at least at temperatures required for Si deposition, as well as Mg2Si and CaSi2 formation. The obtained black-SS/Fe3O4/Si/Mg2Si/CaSi2 sample preserved, to some extent, its underlying textured morphology and demonstrated an averaged reflection of 15% over the spectral range of 200–1800 nm, while its prototype HSC possessed a wideband photoresponse with a photoelectric conversion efficiency of 7.5% under AM1.5 illumination. Moreover, Si layers deposited alone onto a black-SS substrate demonstrated competitive antireflection properties compared with black Si (b-Si) obtained by traditional top-down etching approaches, and hybrid b-Si/textured-SS structures with a glue-bonded interlayer.
“…As a result, the b-SS/Fe 3 O 4 /Si/Mg 2 Si/CaSi 2 prototype HSC was found to possess the highest PV performance with a PCE of 7.5%, J sc = 25.97 mA/cm 2 , FF = 55.9% and V oc = 0.477 V, thus, confirming the feasibility of the proposed approach of the direct integration of black solar light absorbers with textured back reflectors without any isolation layers for preventing uncontrolled diffusion and other accompanying issues. The PCE achieved for the black Si/Mg 2 Si tandem not only demonstrates a 30-fold increase in PV performance compared with its flat counterpart [ 29 ], but also keeps pace with other state-of-the-art SCs fabricated on other construction-compatible substrate materials. Moreover, the b-SS/Fe 3 O 4 /Si templates that were also used in the current study create an opportunity for a simple, low-cost approach for the fabrication of substrate-supported black Si structures for flexible and other feasible applications.…”
Section: Resultsmentioning
confidence: 89%
“…On one hand, Mg 2 Si possesses outstanding optoelectronic properties to be applied as a VIS-NIR light absorber and photodetector with high Si-compatibility [ 46 , 47 , 48 , 49 , 50 , 51 ]. On the other hand, we have already demonstrated that silicidation of the textured Si surface such as b-Si with magnesium resulted in a new wide band optical absorber called “black silicide” [ 29 ], demonstrating a very high PV potential. Thus, it seemed natural to extend this paradigm beyond b-Si substrates towards more cost-efficient ones, such as b-SS/Fe 3 O 4 /Si, considered in the present study.…”
Section: Resultsmentioning
confidence: 99%
“…The resultant SS/Fe 3 O 4 /Si templates demonstrated competitive antireflection properties without needing to deposit any intermediate layers. In addition, we further exploited our concepts of the black silicide [ 29 ], which deals with semiconducting magnesium silicide (Mg 2 Si) formation atop a textured Si surface, and optically transparent calcium disilicide (CaSi 2 ) [ 30 ] that acts as a top electrode, to demonstrate a prototype Si-silicide heterojunction solar cell (HSC) with the black-SS/Fe 3 O 4 /Si/Mg 2 Si/CaSi 2 structure. The former concept is devoted to the silicidation of the Si surface textures, which results in the preservation of the original morphology, while providing unprecedented near-infrared (NIR) antireflection performance.…”
This paper reports on a facile bottom-up method for the direct integration of a silicon (Si)-magnesium silicide (Mg2Si) heterojunction solar cell (HSC) with a textured rear reflector made of stainless steel (SS). Modified wet chemical etching and post processing of SS substrates resulted in the formation of both a rough surface texture and diffusion barrier layer, consisting of magnetite (Fe3O4) with reduced optical reflection. Then, Si, Mg2Si and CaSi2 layers were stepwise thermally evaporated onto the textured SS surface. No traces of Fe and Cr silicide phases were detected by Raman spectroscopy, confirming effective suppression of impurity diffusion from the SS to the upper layers at least at temperatures required for Si deposition, as well as Mg2Si and CaSi2 formation. The obtained black-SS/Fe3O4/Si/Mg2Si/CaSi2 sample preserved, to some extent, its underlying textured morphology and demonstrated an averaged reflection of 15% over the spectral range of 200–1800 nm, while its prototype HSC possessed a wideband photoresponse with a photoelectric conversion efficiency of 7.5% under AM1.5 illumination. Moreover, Si layers deposited alone onto a black-SS substrate demonstrated competitive antireflection properties compared with black Si (b-Si) obtained by traditional top-down etching approaches, and hybrid b-Si/textured-SS structures with a glue-bonded interlayer.
“…Результаты экспериментов на вычислительном кластере с NUMA-архитектурой вычислительных узлов, включающих два 8 ядерных процессоров Intel Xeon E5620, объединенных шиной Intel QuickPath Interconnect (QPI) с сетевыми адаптерами стандарта Infi niBand QDR представлены на Рис. 144. Результаты экспериментов на вычислительном кластере с SMP-архитектурой вычислительных узлов, включающих два 8 ядерных процессоров Intel Xeon E5420 сетевыми адаптерами стандарта Gigabit Ethernet представлены на Рис.…”
Section: генерация холодной плазменной струи при импульсном иницииров...unclassified
“…Рис 144 . Время выполнения операции All-to-all вычислительном кластере с NUMA-узлами в зависимости от расположения процессов по вычислительным ядрам: (а) требуемая подсистема из 6 процессорных ядер; (б) требуемая подсистема из 12 процессорных ядер.…”