2019
DOI: 10.1016/j.vacuum.2018.10.070
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Mg-doped ZnO nanostructures for efficient Organic Light Emitting Diode

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Cited by 29 publications
(12 citation statements)
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“…Zn 2+ substitute into Mg 2+ leads to the increment in electron concentration and oxygen vacancy because of ionic radii and electronegativity difference of both materials, and thus, increase of carrier density leads the way to lifting of Fermi level to the degenerate semiconductor CB as ZnO is one of the most degenerate semiconductors. Due to this action, Fermi level as well as its position relies upon concentration of free electrons and excitation of electrons from VB to Fermi level, resulting in the increment of density of free electron and band gap widening [ 39 ]. This Burstein–Moss shift contributes to the observed Eg widening of Mg-doped ZnO NRs.…”
Section: Resultsmentioning
confidence: 99%
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“…Zn 2+ substitute into Mg 2+ leads to the increment in electron concentration and oxygen vacancy because of ionic radii and electronegativity difference of both materials, and thus, increase of carrier density leads the way to lifting of Fermi level to the degenerate semiconductor CB as ZnO is one of the most degenerate semiconductors. Due to this action, Fermi level as well as its position relies upon concentration of free electrons and excitation of electrons from VB to Fermi level, resulting in the increment of density of free electron and band gap widening [ 39 ]. This Burstein–Moss shift contributes to the observed Eg widening of Mg-doped ZnO NRs.…”
Section: Resultsmentioning
confidence: 99%
“…All samples showed an emission peak in the UV region, which is ascribed to exciton recombination. Peaks observed in the visible region appear due to defect states (donor), such as O 2 vacancies-V o , Zn interstitials-Zn i , defect states (acceptor) from zinc vacancies-V z and oxygen interstitials-O i [ 39 ]. The peaks intensity ratio in the UV and visible region is mostly affected by crystal quality of doped materials, as the defects density decreases with crystallinity amplification.…”
Section: Resultsmentioning
confidence: 99%
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“…The O 2 peak intensity of Mg-doped ZnO has a higher peak intensity than the undoped ZnO, and the O 2 peak area ratio changes from 14.19% t to 45.15% t, indicating that the dopant greatly increases the oxygen vacancy concentration. This result is an increase in oxygen vacancies due to the difference in electronegativity and ionic radius between Zn and Mg during the substitution of Zn 2+ by Mg 2+ in the ZnO lattice [36]. Some previous studies have shown that oxygen vacancies on the surface increase the concentration of the charge carriers and are therefore able to improve the humidity sensing performance [37].…”
Section: Resultsmentioning
confidence: 99%
“…ZnO has attracted the attention of many researchers for many years due to some of its properties such as wide band gap (3.30eV), high exciton binding energy (60MeV) at room temperature, stable hexagonal wurtzite structure with space group P63mc [1,2]. These features have made it desirable for several applications including photocatalysis [3], surface acoustic wave devices [4], photodetectors [5], gas sensors [6], light-emitting diodes [7,8], and solar cells [9]. ZnO lms has been produced using various methods such as thermal evaporation [10], pulsed laser [11], sol-gel spin-coated [12,13], spray pyrolysis [14], rf sputtering [15,16], electro deposition [17], dc-rf magnetron sputtering [18,19], metal-organic chemical vapor deposition [20], and so on.…”
Section: Introductionmentioning
confidence: 99%