Mg dopant induced ultra-high HRS resistance and striking switching window characteristics in amorphous Y2O3 film-based memristors
Yuanyuan Zhu,
Zicong Guo,
Mengyao Chen
et al.
Abstract:Y2O3 has attracted attention as the representative emerging candidate of a resistive switching (RS) medium in memristors due to its excellent electrical properties and good thermal stability. However, many challenges for Y2O3 film-based memristors remain to be resolved, particularly for the small switching window. Here, the doping engineering strategy is proposed, and in particular, the Mg doped amorphous Y2O3 film is adopted as the RS layer to construct memristors. The prepared Pt/Mg:Y2O3/Pt memristor exhibit… Show more
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