MFSFET with 5nm Thick Ferroelectric Nondoped HfO₂ Gate Insulator Utilizing Low Power Sputtering for Pt Gate Electrode Deposition

Digital/Analog-Operation of Hf-based FeNOS Nonvolatile Memory utilizing Ferroelectric Nondoped HfO₂ Blocking Layer

“…We have proposed the digital/analog-operation utilizing ferroelectric nondoped HfO 2 (FeND-HfO 2 ) as a BL in the Hf-based MONOS structure, which is called FeNOS NVM, as shown in Fig. 1(a) [9][10][11][12]. The FeND-HfO 2 was able to be formed when the nitrogen concentration of HfN x CTL was x=1.1.…”

Influence of XeCl excimer laser annealing on the ferroelectric nondoped HfO2 formation deposited on a Si(100) substrate

“…[19][20][21][22] We have realized the ferroelectric nondoped HfO 2 (FeND-HfO 2 ) which was directly deposited on a Si substrate by RF magnetron sputtering utilizing strain-controlled deposition. [23][24][25][26][27][28][29][30][31][32][33][34] Although the annealing temperature was decreased to 500 °C, memory characteristics such as the MW are necessary to be improved. We have used rapid thermal annealing (RTA) for the crystallization of HfO 2 .…”