2007
DOI: 10.1063/1.2819603
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Meyer-Neldel rule in ZnO

Abstract: The dissipation of potential energy of multiply charged Ar ions incident on Cu has been studied by complementary electron spectroscopy and calorimetry at charge states between 2 and 10 and kinetic energies between 100 eV and 1 keV. The emitted and deposited fractions of potential energy increase at increasing charge state, showing a significant jump for charge states q > 8 due to the presence of L-shell vacancies in the ion. Both fractions balance the total potential energy, thus rendering former hypotheses of… Show more

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Cited by 12 publications
(12 citation statements)
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“…The observed wavelength indicates that the energy difference (> 1.66eV) between the hole and electron is larger than band gap (1.2eV), so that the excited electrons are in extended states. According to (54) and Figure 5, higher extended states are more quickly depleted by the non-radiative transitions than the lower ones, so that a photoluminescence signal with higher frequency has a shorter lifetime. We need to be careful on two points: (i) the observed recombination time is order of ns, it is the EE transitions that limits EL transition to a large extent; (ii) for a quantum well, the number of atoms is small, so that the reorganization energy is smaller than the bulk.…”
Section: El Transition and Ee Transitionmentioning
confidence: 99%
“…The observed wavelength indicates that the energy difference (> 1.66eV) between the hole and electron is larger than band gap (1.2eV), so that the excited electrons are in extended states. According to (54) and Figure 5, higher extended states are more quickly depleted by the non-radiative transitions than the lower ones, so that a photoluminescence signal with higher frequency has a shorter lifetime. We need to be careful on two points: (i) the observed recombination time is order of ns, it is the EE transitions that limits EL transition to a large extent; (ii) for a quantum well, the number of atoms is small, so that the reorganization energy is smaller than the bulk.…”
Section: El Transition and Ee Transitionmentioning
confidence: 99%
“…Note that the values for ZnO were adopted for certain unknown parameters such as the dielectric constant 37 and capturing cross-section of a defect. 38 The variations of n and E Fn ¹ E C under light irradiation equivalent to AM1.5 are not significant because of the very large value of n 0 (assumed to be 10 17 cm ¹3 ). On the other hand, p and E V ¹ E Fp are significantly changed even by weak excitation because of the very low concentration of the minority carrier in darkness (p 0 ).…”
Section: Quasi-fermi Levels Of Photocatalyst Particles Under Light Irmentioning
confidence: 99%
“…Typically, the value of k B T MN is in the range from 25 meV to 100 meV for semiconductor materials. [4][5][6] Using …”
Section: Resultsmentioning
confidence: 99%