MeV Energy $\hbox{N}^{+}$-Implanted Planar Optical Waveguides in Er-Doped Tungsten-Tellurite Glass Operating at 1.55  $\mu\hbox{m}$

Bányász, I.; Berneschi, Simone; Bettinelli, Marco; Brenci, M.; Fried, M.; Khánh, Nguyễn Quốc; Lohner, T.; Conti, Gualtiero Nunzi; Pelli, S.; Petrik, P.; Righini, Giancarlo C.; Speghini, Adolfo; Watterich, A.; Zolnai, Zsolt

doi:10.1109/jphot.2012.2194997

Cited by 22 publications

(13 citation statements)

References 18 publications

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“…Number and positions of dark lines correspond to our calculations published recently [14]. There is a large change of 0.03 in n eff0 between 0.5·10 16 and 1·10 16 ions/cm 2 in the 1.5 MeV curve, a clear indication of the onset of guiding in higher modes.…”

Section: Results For Er: Te Glasssupporting

confidence: 62%

“…This resulted in 3.5 MeV as the upper limit of N + energy. Results of our more recent experiments proved that planar waveguides fabricated with 3.5 MeV N + irradiation supported modes up to 1.5 µm, both in BGO crystals [9] and Er: Te glass [14]. Irradiated fluence ranges were chosen based on results of our previous experiments, so as to achieve the necessary refractive index modulation in the waveguides.…”

Section: Furthermore There Is No Explanation As To Why the Samples Anmentioning

confidence: 99%

“…Those results will be published in another article. [9] and Er: Te glass [14]. Irradiated fluence ranges were chosen based on results of our previous experiments, so as to achieve the necessary refractive index modulation in the waveguides.…”

Section: )mentioning

confidence: 99%

“…for building Pockels cells, and can also be used in the fabrication of photorefractive devices. [9] and Er:…”

Section: Introductionmentioning

confidence: 99%

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M-line spectroscopic, spectroscopic ellipsometric and microscopic measurements of optical waveguides fabricated by MeV-energy N+ ion irradiation for telecom applications

et al. 2013

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Irradiation with N+ ions of the 1.5 -3.5 MeV energy range was applied to optical waveguide formation. Planar and channel waveguides have been fabricated in an Er-doped tungsten-tellurite glass, and in both types of bismuth germanate (BGO) crystals: Bi4Ge3O12 (eulytine) and Bi12GeO20 (sillenite). Multi-wavelength m-line spectroscopy and spectroscopic ellipsometry were used for the characterisation of the ion beam irradiated waveguides. Planar waveguides fabricated in the Er-doped tungsten-tellurite glass using irradiation with N+ ions at 3.5 MeV worked even at the 1550 nm telecommunication wavelength. 3.5 MeV N+ ion irradiated planar waveguides in eulytine-type BGO worked up to 1550 nm and those in sillenite-type BGO worked up to 1330 nm. According to our previous investigations [7], MeV energy N + irradiations at high fluences resulted in the formation of a barrier layer around the stopping range of the ions. The fluences indicated in Table 1 were appropriate to obtain sufficiently large refractive index difference between the well and the barrier for guiding. The Guest Editor 3) The waveguide losses can be measured by using back-reflection method even for short samples. Any method for ion implanted waveguide has its own advantages and shortcomings. The authors should not expect too much from longer samples. For high-loss waveguides, the surface scattering method reflects sometimes very wrong results.We have made the following modifications to comply with the above request:We added the following sentence to Chapter 6. Conclusion, on page 18 line 5:Besides of the double prism method, propagation losses will be measured by the backreflection method, too. 4) Only showing the modal lines is a not a direct proof for a real waveguide. For some ion implanted waveguides, one can detect beautiful modes, but the light cannot go through the waveguides with a simple end-face coupling system. So what I suggest for the future work is not to make more samples but to first test the propagation (transmission) of light in the waveguide. This can be stated in the Conclusion section.We have made the following modifications to comply with the above request:We added the following sentence before the last sentence of the 6. Conclusion Chapter: 2.Issues raised by Reviewer #2: Firstly the paper is not particularly well written. The introduction does not critically review past studies and as a result it is not clear how this present study is novel or different.Since this article is not a review, detailed discussion of previous art is outside its scope. This article is based on an oral presentation given at Symposium W-Current Trends in Optical and X-Ray Metrology of Advanced Materials for Nanoscale Devices III of the 2012 Spring meeting of the EMRS Society, our aim was to present the following novelties of our results:1. Application of spectroscopic ellipsometry to the quantitative study of (ion beam irradiated) planar optical waveguides 2. Comparison of the spectroscopic ellipsometric results with the predictions of SRIM simu...

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Section: Results For Er: Te Glasssupporting

confidence: 62%

Section: Furthermore There Is No Explanation As To Why the Samples Anmentioning

confidence: 99%

Section: )mentioning

confidence: 99%

“…for building Pockels cells, and can also be used in the fabrication of photorefractive devices. [9] and Er:…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

M-line spectroscopic, spectroscopic ellipsometric and microscopic measurements of optical waveguides fabricated by MeV-energy N+ ion irradiation for telecom applications

et al. 2013

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“…In some cases, an optical burrier structure is generated by the nuclear interaction among the incoming ions and those originally present in the bulk material. Light can be confined in the layer comprised between the "end of range" where the optical barrier is located (the zone at lower refractive index) and the surface of the specimen [18][19][20]. Light propagation inside these structures occurs by means of leaky -modes.…”

Section: Introductionmentioning

confidence: 99%

Ion beam irradiated optical channel waveguides

Bányász

Rajta

Nagy

et al. 2014

Integrated Optics: Devices, Materials, and Technologies XVIII

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Nowadays, in the modern optical communications systems, channel waveguides represent the core of many active and passive integrated devices, such as amplifiers, lasers, couplers and splitters. Different materials and fabrication processes were investigated in order to achieve the aforementioned optoelectronic circuits with low costs and high performance and reproducibility. Nevertheless, the 2D guiding structures fabrication continues to be a challenging task in some of optical materials due to their susceptibility to mechanical and/or chemical damages which can occur during the different steps of the fabrication process. Here we report on channel waveguides demonstration in erbium doped TungstenTellurite (Er 3+ :TeO 2 -WO 3 ) glasses and BGO crystals by means of a masked ion beam and/or direct writing processes performed at different energy MeV and ions species. The evidence of the waveguides formation was investigated by microscopy techniques and micro Raman spectroscopy.

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Glass and anti-glass phase co-existence and structural transitions in bismuth tellurite and bismuth niobium tellurite systems

Gupta

Khanna

2018

Journal of Non-Crystalline Solids

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MeV Energy $\hbox{N}^{+}$-Implanted Planar Optical Waveguides in Er-Doped Tungsten-Tellurite Glass Operating at 1.55 $\mu\hbox{m}$

Cited by 22 publications

References 18 publications

M-line spectroscopic, spectroscopic ellipsometric and microscopic measurements of optical waveguides fabricated by MeV-energy N+ ion irradiation for telecom applications

M-line spectroscopic, spectroscopic ellipsometric and microscopic measurements of optical waveguides fabricated by MeV-energy N+ ion irradiation for telecom applications

Ion beam irradiated optical channel waveguides

Glass and anti-glass phase co-existence and structural transitions in bismuth tellurite and bismuth niobium tellurite systems

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