2011
DOI: 10.1109/tsm.2011.2159139
|View full text |Cite
|
Sign up to set email alerts
|

Metrology Sampling Strategies for Process Monitoring Applications

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
1

Citation Types

0
5
0

Year Published

2012
2012
2020
2020

Publication Types

Select...
4
3
1

Relationship

0
8

Authors

Journals

citations
Cited by 9 publications
(5 citation statements)
references
References 10 publications
0
5
0
Order By: Relevance
“…Vincent et al 5 explores the use of modeling and minimum-variance prediction as a method to select sites for measurement on each wafer by using statistical tools such as Principal Component Analysis (PCA) and Canonical Correlation Analysis (CCA). The within-wafer spatial variability information is captured in the principal components obtained by analyzing a historical set of data.…”
Section: Interpolating Metrologymentioning
confidence: 99%
“…Vincent et al 5 explores the use of modeling and minimum-variance prediction as a method to select sites for measurement on each wafer by using statistical tools such as Principal Component Analysis (PCA) and Canonical Correlation Analysis (CCA). The within-wafer spatial variability information is captured in the principal components obtained by analyzing a historical set of data.…”
Section: Interpolating Metrologymentioning
confidence: 99%
“…Ideally each wafer should be measured at a large number of locations to provide detailed performance information for APC, and also for Predictive Maintenance (PdM) and product quality assessment activities [10], [25], [26], [29]. In practice, such extensive metrology is not feasible due to the impact on cycle-time and the high cost of the precision metrology technologies needed [24].…”
mentioning
confidence: 99%
“…In recent years there has been increasing interest in developing data driven wafer measurement plan optimization methodologies that can take account of spatial correlation to further reduce the number of sites that need to be measured. Vincent et al [25] developed a methodology based on Principal Component Analysis (PCA) modelling and minimumvariance estimation. They considered both within wafer spatial patterns and temporal correlation patterns in their formulation, but concluded that only spatial patterns were present in the practical lithoetch process case study they used to validate their approach.…”
mentioning
confidence: 99%
“…Ideally each wafer should be measured at a large number of locations to provide detailed performance information for APC, and also for Predictive Maintenance (PdM) and product quality assessment activities [10], [25], [26], [29]. In practice, such extensive metrology is not feasible due to the impact on cycle-time and the high cost of the precision metrology technologies needed [24].…”
mentioning
confidence: 99%
“…Vincent et al [25] developed a methodology based on Principal Component Analysis (PCA) modelling and minimum-variance estimation. They considered both within wafer spatial patterns and temporal correlation patterns in their formulation, but concluded that only spatial patterns were present in the practical litho-etch process case study they used to validate their approach.…”
mentioning
confidence: 99%