2003
DOI: 10.1117/12.512216
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Metrological characterization of nanometer film thickness standards for XRR and ellipsometry applications

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Cited by 14 publications
(9 citation statements)
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“…These results are consistent with the results reported earlier in the literature. 6,9 A comparison of the thickness values observed for well-characterized Ta 2 O 5 films using SE and XRR are shown in Fig. 4.…”
Section: Resultsmentioning
confidence: 99%
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“…These results are consistent with the results reported earlier in the literature. 6,9 A comparison of the thickness values observed for well-characterized Ta 2 O 5 films using SE and XRR are shown in Fig. 4.…”
Section: Resultsmentioning
confidence: 99%
“…Hasche et al had used a photon energy of 1841 eV for XRR measurements, which is just above the Si K-edge absorption. 9 At these energies the authors found sufficient contrast between the electron densities of both materials and the results were reported with low uncertainties. Clearly the SiO 2 /Si system is not a material of choice for metrological characterization of nanometer film thickness standards using frequently employed laboratory x-ray sources that can be used with high throughput thin film deposition processes.…”
Section: Introductionmentioning
confidence: 95%
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“…X-ray reflectometry is widely used for characterizing the thickness, roughness, and density of nanometer scale thin films. Because it uses wavelengths of a similar or smaller scale relative to the thicknesses of the layers being studied, the resulting data has a relatively direct connection to the structure and therefore has a rather straightforward traceability to the International System of Units (SI) [1,2,3]. This is a significant advantage over other techniques like spectroscopic ellipsometry (SE), whose results are somewhat more difficult to interpret.…”
Section: Introductionmentioning
confidence: 99%