Methods of dislocation structure characterization in A IIIB V semiconductor single crystals

Abstract

The development pace of advanced electronics raises the demand for semiconductor single crystals and strengthens the requirements to their structural perfection. Dislocation density and distribution pattern are most important parameters of semiconductor single crystals which determine their performance as integrated circuit components. Therefore studies of the mechanisms of dislocation nucleation, slip and distribution are among the most important tasks which make researchers face the choice of suitable analytical methods. This work is an overview of advanced methods of studying and evaluating dislocation density in single crystals. Brief insight has been given on the main advantages and drawbacks of the methods overviewed and experimental data have been presented. The selective etching method (optical light microscopy) has become the most widely used one and in its conventional setup is quite efficient in the identification of scrap defects and in dislocation density evaluation by number of etch pits per vision area. Since the introduction of digital light microscopy and the related transfer from image analysis to pixel intensity matrices and measurement automation, it has become possible to implement quantitative characterization for the entire cross-section of single crystal wafers and analyze structural imperfection distribution pattern. X-ray diffraction is conventionally used for determination of crystallographic orientation but it also allows evaluating dislocation density by rocking curve broadening in double-crystal setup. Secondary electron scanning electron microscopy and atomic force microscopy allow differentiating etch patterns by origin and studying their geometry in detail. Transmission electron microscopy and induced current method allow obtaining micrographs of discrete dislocations but require labor-consuming preparation of experimental specimens. X-ray topography allows measuring bulky samples and also has high resolution but is hardly suitable for industry-wide application due to the high power consumption of measurements. Digital image processing broadens the applicability range of basic dislocation structure analytical methods in materials science and increases the authenticity of experimental results.

Influence of silicon characteristics on the parameters of manufactured photonics cells

“…The capacitance of REs (C RE ) was determined at a U bias =2-120 V To investigate the defective structure of the substrates with [111] orientation, chemical treatment was performed in selective Sirtle`s etchant [12] with the following composition: HF -100 cm 3 , CrO 3 -50 g, H 2 O -120 cm 3 To investigate the defective structure of the substrates with [100] orientation, chemical treatment was performed in selective Secko's etchant [13] with the following composition: 4.4% K 2 Cr 2 O 7 : HF = 1 : 2 Then the surface was examined in microscopes of different magnifications. The number of dislocations was calculated by the metallographic method [14].…”

High-responsivity silicon p–i–n mesa-photodiode

“…Before the selective etching, washing was performed in a mixture of Caro and ammonia-peroxide solution. The number of dislocations was calculated by the metallographic method [21].…”