Methods for the reduction of the micropipe density in SiC single crystals

Liu, Jun Lin; Ji, Cheng; Yang, Jian Feng; Qiao, Guan Jun

doi:10.1007/s10853-006-1166-5

Cited by 5 publications

(2 citation statements)

References 24 publications

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“…Suo et al revealed that the majority of dislocations occurred in the initial stages by the assistance of x-ray topography (XRT) [94]. As the growth process, Liu et al found dislocations will also nucleate near polytypes, voids, or impurities such as silicon droplets and carbon encapsulate [91,95]. To improve crystal quality and reduce the dislocation density inside the crystal, Nakamura et al invented a repeated a-face growth method to reduce the quantity of dislocations down to two to three orders of magnitude, achieving dislocation-free [96].…”

Section: Generation and Suppression Of Line Defectsmentioning

confidence: 99%

Advances and challenges in 4H silicon carbide: defects and impurities

Yang,

Tong,

et al. 2024

Phys. Scr.

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Under the impetus of global carbon peak and carbon neutrality goals, a new generation of semiconductor material is urgently needed in various aspects of power electronic systems. In comparison to traditional semiconductor materials like single-crystal silicon, the outstanding characteristics of 4H silicon carbide (4H-SiC) have gradually positioned it as a crucial semiconductor material for emerging power semiconductor applications. Given the significance of impurities and defects in the semiconductor, comprehensive and in-depth understanding of impurities and defects about 4H-SiC plays a crucial guiding role. This paper, building upon a brief overview of the current state of 4H-SiC research, summarizes the experimental and theoretical advancements in the study of defects and impurities about 4H-SiC in recent years. Besides, we also systematically review the categories of defects in 4H-SiC, introduce methods for characterizing and identifying defects in 4H-SiC, and thoroughly discuss potential doping technologies in 4H-SiC. Challenges faced in the research of defects and impurities are ﬁnally outlined.

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Section: Generation and Suppression Of Line Defectsmentioning

confidence: 99%

Advances and challenges in 4H silicon carbide: defects and impurities

Yang,

Tong,

et al. 2024

Phys. Scr.

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“…[1] The micropores were often associated with subgrain boundaries, [2] a polytype instability, [3,4] and a seed fixation. [5,6] A micropipe (MP) is the most harmful defect consisting of a hole around a core of super-dislocation. Although MPs were eliminated from commercial SiC substrates, [7] the production of wafers with a low density of pores is still costly.…”

Section: Introductionmentioning

confidence: 99%

Near‐Field Phase‐Contrast Imaging of Micropores in Silicon Carbide Crystals with Synchrotron Radiation

Kohn

Argunova

2022

Physica Status Solidi (b)

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The results of in‐line phase‐contrast imaging of micropores in crystals with synchrotron radiation (SR) using an example of silicon carbide (SiC) single crystal are reported. Computer simulations of micropore images have provided a thorough interpretation of specific features of experimental results. Herein, micropores of sizes in the interval from a few micrometers to several tens of micrometers are analyzed. The near‐field condition is realized only on a short distance behind the sample for such dimensions. In addition, the size of experimental images is below the resolution limit of the best possible charge‐coupled device detectors. Therefore, it is impossible to determine the actual transverse dimensions directly under the near‐field experiment. A new experimental setup is proposed that employs a secondary SR source created by a compound refractive lens at the focus. Two conditions have to be satisfied. First, the focus must be located in front of the sample at a short distance. Second, the beam size at the focus has to be as small as possible. The implementation of the new scheme requires a high‐intensity synchrotron or X‐ray laser beam provided by modern X‐ray radiation sources. Computer simulations of a virtual experiment using this new method are performed.

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Contact‐free reactions between micropipes in bulk SiC growth

Gutkin

Sheĭnerman

Kohn

et al. 2012

Physica Status Solidi (a)

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It has been generally accepted that any reaction between micropipes in silicon carbide (SiC) crystals requires a direct contact of the micropipes. We propose a new model of contactfree reactions that are realized through the emission and absorption of full-core dislocations by micropipes.This model can explain the correlated reduction in micropipe radii in the samples with low micropipe densities which has been observed in synchrotron radiation (SR) phase contrast images supported by computer simulations. We provide a theoretical description of a contact-free reaction between two parallel micropipes.

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Methods for the reduction of the micropipe density in SiC single crystals

Cited by 5 publications

References 24 publications

Advances and challenges in 4H silicon carbide: defects and impurities

Advances and challenges in 4H silicon carbide: defects and impurities

Near‐Field Phase‐Contrast Imaging of Micropores in Silicon Carbide Crystals with Synchrotron Radiation

Contact‐free reactions between micropipes in bulk SiC growth

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