Methods for improvement of the consistency and durability of the inorganic memristor structures

Composite Nanomaterials for Implementation of Promising Memristive Structures

“…The solution to this problem is achieved by the fact that in a memristor based on metal oxide, consisting of one or more alternating layers, namely, an active layer located between two conductive electrodes along the periphery of the active medium region, an additional insulating layer is applied, on top of which a conductive layer is formed, electrically connected to the negative bus. The presence of a conductive layer, electrically connected to the negative bus, provides creation of an external electric field along the contour covering the area of the active medium of the memristive cell, due to which the negative oxygen ions in the active medium interact with the external electric field, which has a leveling effect on the conduction channels of the active layer and ensures the stability and repeatability of the characteristics of the memristive cell [8,9]. The proposed method provides formation of the required vertical memristive profile (Fig.…”

“…To increase stability of the characteristics of a memristor, it is possible to improve its geometry, search for new materials and new methods for forming the active layer and memristor electrodes, and also develop memristor cell architectures in which it would be possible to control the distribution of the electric field in the active layer [9]. Ideally, all these approaches should be used simultaneously, but the latter is the simplest and most technologically advanced and allows one to improve the architecture of the memristor structure [10].…”

“…Analysis of alternative materials for creating a resistive memristor layer showed the possibility of using the following materials [4][5][6][7][8][9][10][11][12][13][14][15][16][17]: single-crystal magnetite, conductive polymers, etc. However, memristors made on basis of such materials are produced by uncharacteristic methods for modern technology.…”

“…It follows that the use of these materials is not rational for production. For this reason, the most often used structure is 'metal-insulator-metal', which in turn is easily integrated into semiconductor technology [4][5][6][7][8][9][10][11][12][13][14][15][16][17].…”

Выбор Технологии Для Корпусирования Радиационно-Стойкой Мемристорной Памяти

“…Однако ей присущи недостатки, свой ственные системам, использующим нагрев для процесса перехода: многократный нагрев приводит к изменению физических свой ств из-за разрушения внутренней структуры вещества. В этой связи наиболее перспективными выглядят системы на основе оксидов металлов, работающие за счет перемещения вакансий кислорода в нанометровом диэлектрическом слое оксидов металлов при приложении электрического поля [5,6].…”