Methodology to evaluate long channel matching deterioration and effects of transistor segmentation on MOSFET matching

Interpretation of MOS transistor mismatch signature through statistical device simulations

“…larger than the STR (depicted in the graph with error bars), decrease of the threshold voltage mismatch. This is the case of technologies whose matching performance are slightly worsened by the presence of potential barriers at source and drain sides created by halo implantations [31,89,90]. In fact, an increase of the temperature will modify both the potential barrier heights and the energy of the carriers.…”

“…This has been reported, for instance, in long MOSFETs with pocket implantations [31,89,90]. To investigate this, random doping fluctuation perturbations have been applied, not only on a representation of a realistic laterally-diffused channel doping profile but also on two other devices with artificial constant doping levels.…”

“…Further investigations for identifying optimal halo doping profiles for different transistor types and their impact on the mismatch signatures will be required to come to better interpretation and modeling of long-channel devices in contemporary and future process nodes [90,89]. Moreover, the literature and the everyday practice of characterization of variability in advanced IC technologies provide a whole range of microscopic device architecture fluctuation effects that could (should?)…”