Methodology for Testing Key Parameters of Array-Level Small-Area Hafnium-Based Ferroelectric Capacitors Using Time-to-Digital Converter and Capacitance Calibration Circuits
Donglin Zhang,
Honghu Yang,
Yue Cao
et al.
Abstract:Hafnium-based ferroelectric memories are a promising approach to enhancing integrated circuit performance, offering advantages such as miniaturization, compatibility with CMOS technology, fast read and write speeds, non-volatility, and low power consumption. However, FeRAM (Ferroelectric Random Access Memory) still faces challenges related to endurance and retention susceptibility to process variations. Hence, testing and obtaining the core parameters of ferroelectric capacitors continuously is essential to in… Show more
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