Methodological investigation on photo-stimulated discharge to obtain accurate trap information in polymer dielectrics

Zhu, Zhien; Zhang, Yewen; An, Zhenlian; Zheng, Feihu

doi:10.1088/0957-0233/22/8/085109

Cited by 12 publications

(10 citation statements)

References 14 publications

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“…The recent improvement of the PSD method concerns the development of new methodologies as the step scanning method and the combined calibration-scanning method [152], or the use of optical parametric oscillator (OPO) laser as irradiation source that allows to reach higher energy resolution, at around 0.01 eV [48]. The step scanning method consists in irradiating the sample by successive wavelength step (i.e.…”

Section: The Additional Physical Processes That Can Be At Playmentioning

confidence: 99%

“…It can then be considered that trapped charges at each energy are completely released. The charge distribution can be obtained by the integrals of PSD currents at each wavelength [152]. As an example, the trap distribution for polyethylene film using the step scanning method is represented in Figure 15.…”

Section: The Additional Physical Processes That Can Be At Playmentioning

confidence: 99%

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confidence: 99%

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Charge trap spectroscopy in polymer dielectrics: a critical review

Teyssèdre¹,

Zheng²,

Boudou³

et al. 2021

J. Phys. D: Appl. Phys.

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Trapping phenomena are essential features controlling the transport properties of insulating materials. Depending on the energy depth, traps can either assist transport or lead to long-lasting storage of charges. The consequences of charge trapping are non-linear phenomena and electric field distribution distortion in the dielectric bulk. The important characteristics about traps are the nature of the levels, their depth in energy, and their density. In this review, we discuss the different techniques available to probe the energetics of traps, particularly in insulating polymers. The methods implemented for approaching the characteristics of traps range from atomistic simulation based on known physical/chemical defects, identification by spectroscopic techniques, and coupled opticalelectrical or thermal-electrical techniques. The review is focused on methods involving thermal or optical excitation coupled to detection using electrical or luminescence response with questioning about the physical hypotheses behind the analysis and the difference in response obtained through the various approaches. The technical implementation of these methods is described, along with examples of application. The differences in trap depth estimation from optical and thermal methods is discussed as well as the impact of having distributed trap depths. The input of luminescence techniques, which provide a fingerprint of chemical groups involved in charge recombination, is put forward.

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Section: The Additional Physical Processes That Can Be At Playmentioning

confidence: 99%

Section: The Additional Physical Processes That Can Be At Playmentioning

confidence: 99%

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Charge trap spectroscopy in polymer dielectrics: a critical review

Teyssèdre¹,

Zheng²,

Boudou³

et al. 2021

J. Phys. D: Appl. Phys.

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“…In fact, the deep trapping centers in polymers have been identi ed corresponding to the chemical defects, such as oxidized groups, additives, impurities and adsorption of water molecules, etc. by using spectroscopic experimental techniques, such as the deep trap level of 4.97eV in polyethylene (PE) 14,15 . By analyzing the exciting photon-energy-dependent chargede-trapping behavior, we point out that the degradation in the endurance characteristics of pentacene based OFET memory with PVN charge-storage layer is dominated by the deep hole-traps in PVN.…”

Section: Unsectioned Paragraphsmentioning

confidence: 99%

Deep-trap Dominated Degradation of the Endurance Characteristics in OFET memory with Polymer Charge-Trapping Layer

Liu

Wang

et al. 2022

Preprint

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Organic field-effect transistors (OFETs) with polymer charge-trapping dielectric, which exhibit many advantages over Si-based memory devices such as low cost, light weight, and flexibility, still suffer challenges in practical application due to the unsatisfied endurance characteristics and even the lack of fundamental of behind mechanism. Here, we real that the degradation of endurance characteristics of pentacene OFET with poly(2-vinyl naphthalene) (PVN) as charge-storage layer is dominated by the deep hole-traps in PVN by using the photo-stimulated charge de-trapping technique with the fiber-coupled monochromatic-light probes. The depth distribution of hole-traps in PVN film of pentacene OFET is also provided.

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“…Yue et al investigated the evolution of deep charge traps in polyimide under low-energy proton irradiation and found that the decrease of PSD intensities is due to the irradiation-induced degradation of carbonyl groups [18]. Based on PSD theory about release of charges from the mono-and multi-level of traps, Zhu et al proposed two modified data processing methods for more accurately obtaining the information of trapped charges [19].…”

Section: Introductionmentioning

confidence: 99%