Method to improve the throughput and retain the CD performance for DUV process

Abstract

One of the major problems for DUV resists is linewidth change owing to Post Exposure Delay (PED) and PEB conditions. In this work, the influence of PED and PEB baking conditions have been investigated based on the measured linewidth, i.e., critical dimension (CD). Our previously established model has been employed to describe the linewidth for various resists and process conditions. Based on our analyzed results, the process flow of wafer can be modified to improve the throughput, and still retain the CD stability and resist profile control.

PAG and Quencher Effects on DBARC Performance

“…It is known that photoacid generators and quenchers play key role in chemically amplified photoresists (CAR) [23][24][25][26][27][28][29][30][31][32][33][34]. They influence most lithographic properties of photoresists such as resolution, exposure latitude, depth-of-focus, I-D bias, MEEF, delay time stability, PEB sensitivity and shelf-life stability among others.…”