Method of Removing Single-Side Doped Layer While Maintaining Pyramid Textured Surface of n-Type Bifacial Solar Cells

Simayi, Shalamujiang; Kida, Yoshihisa; Shirasawa, Katsuhiko; Suzuki, Tatsunobu; Takato, Hidetaka

doi:10.1109/jphotov.2016.2646060

Cited by 10 publications

(9 citation statements)

References 16 publications

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“…Because of this, the cell conversion efficiency is affected by the rear-side reflections. According to our measurement, 29) the cell efficiency was decreased 0.2% if we apply the black sheet on the rear-side of the cell. As Table I, the cells with selective emitter shows an average V oc of 640.9 mV, which is about 4.4 mV higher than that of the homogeneous emitter cells along with the J sc keeps constant.…”

Section: N-type Bifacial Solar Cell With Selective and Homogeneous Bomentioning

confidence: 80%

“…The details of the cell fabrication process including the formation of boron emitter and phosphorus BSF and their passivation have been discussed in our previous papers. [15][16][17]29) Boron selective emitter n-type bifacial solar cell: The Cell fabrication process sequences are illustrated in Fig. 2 and compared with the FREA standard homogeneous bifacial solar cell fabrication process sequences.…”

Section: Experimental Methodsmentioning

confidence: 99%

“…These details of etching characteristics of this solution have been discussed in our previous paper. 29) The passivation quality of SiN x =Al 2 O 3 on the baseline boron emitter and the etched-back boron emitters were investigated on a symmetrical p + np + lifetime sample. The symmetrical p + np + samples were fabricated on wet chemical-polished n-type CZ silicon wafers with thicknesses of 180 µm.…”

Section: Experimental Methodsmentioning

confidence: 99%

“…By removing the boron-depleted surface region, its efficiency reached 19.6%. 15,16) Previously published analysis on the competing mechanism in an n-type bifacial solar cell indicated that the boron emitter sheet resistance is one of the main factors that limits the cell short circuit current J sc , and open-circuit voltage V oc . 17) In addition, it was found that minimizing the surface recombination at the front surface and phosphorus BSF side is a promising way to increase the cell efficiency.…”

Section: Introductionmentioning

confidence: 99%

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Screen-printed contacts with H-patterned n-type passivated emitter rear totally diffused solar cell and front-side boron selective emitter formed by wet chemical etching

Simayi¹,

Kida²,

Utsunomiya³

et al. 2018

Jpn. J. Appl. Phys.

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This paper presents the efficiency distribution of an n-type bifacial solar cell. In this work, the solar cells were produced by our standard cell fabrication process, which is very similar to the industrial line process. The best cell efficiency was 20.4%, and the average efficiency was 20.06%. The cell efficiency ranged between 19.9 and 20.4% and showed a narrow efficiency distribution. This paper also presents the development of a boron selective emitter (p + /p ++ ) n-type bifacial solar cell. In this work, the cells were fabricated using the standard cell fabrication process based on tube-furnace thermal diffusion employing liquid sources: BBr 3 for the front-side boron emitter and POCl 3 for the rear-side phosphorus backsurface field (BSF). The p + /p ++ structure was formed by screen-printing resist masking and wet chemical etching technology. Both the front-and rear-side electrodes were obtained by using screen-printed contacts with H-patterns. The cell efficiency with the selective boron emitter was almost the same as that with the homogeneous emitter; however, the V oc of the selective emitter solar cell was higher than that of the homogeneous emitter solar cell by 4.4 mV. Finally, we performed the recombination analysis of the completed cell.

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Section: N-type Bifacial Solar Cell With Selective and Homogeneous Bomentioning

confidence: 80%

Section: Experimental Methodsmentioning

confidence: 99%

Section: Experimental Methodsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Screen-printed contacts with H-patterned n-type passivated emitter rear totally diffused solar cell and front-side boron selective emitter formed by wet chemical etching

Simayi¹,

Kida²,

Utsunomiya³

et al. 2018

Jpn. J. Appl. Phys.

Self Cite

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“…All the time, n-type bifacial cells were paid close attention to by many PV researchers all the time [24][25][26], and a higher efficiency of solar cell was obtained [27,28]. Currently n-type wafer is much more expensive than p-type wafer and n-type PERC cell process is very complex.…”

Section: Introductionmentioning

confidence: 99%

Bifacial p-Type PERC Solar Cell with Efficiency over 22% Using Laser Doped Selective Emitter

et al. 2020

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In this paper, we report one bifacial p-type PERC solar cell with efficiency over 22% using laser doped selective emitter produced in larger-scale commercial line on 6-inch mono-crystalline wafer. On front side of the solar cell, square resistance of p-n junction was found to be closely related with laser power at certain laser scan speed and frequency. On the other side, the rear fingers with different ratios of height and width and rear silicon nitride (SiNx) layer with different thickness were optimized, and a highest rear efficiency of the bifacial solar cell was obtained. Finally, bifacial silicon solar cells with the front and rear efficiencies exceeding 22% and 15% (AM1.5, 1000 W/m2, 25 °C) were successfully achieved, respectively.

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Characterization of Bifacial Passivated Emitter and Rear Contact Solar Cell

Tummala¹,

Bobba²,

Kosaraju³

2022

Lecture Notes in Electrical Engineering

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Method of Removing Single-Side Doped Layer While Maintaining Pyramid Textured Surface of n-Type Bifacial Solar Cells

Cited by 10 publications

References 16 publications

Screen-printed contacts with H-patterned n-type passivated emitter rear totally diffused solar cell and front-side boron selective emitter formed by wet chemical etching

Screen-printed contacts with H-patterned n-type passivated emitter rear totally diffused solar cell and front-side boron selective emitter formed by wet chemical etching

Bifacial p-Type PERC Solar Cell with Efficiency over 22% Using Laser Doped Selective Emitter

Characterization of Bifacial Passivated Emitter and Rear Contact Solar Cell

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