Method of extraction and analysis of solar cell parameters from the dark current-voltage curve

Haouari-Merbah, M.; Belhamel, M.; Tobias, Irwin; Ruiz, J.

doi:10.1109/sced.2005.1504377

Cited by 6 publications

(5 citation statements)

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“…Las densidades de portadores altas portadores altas son importantes en el uso de recombinación AUGER, por lo tanto en las celdas solares al dopar, el valor de la densidad esta obtenida inferior a 10 18 𝑐𝑚 −3 (Altermatt, 2011). También, a densidades de soporte aproximadamente inferiores a 10 18 𝑐𝑚 −3 , los pares de electrón-hueco son menos eficientes debido a https://doi.org/10.55204/trc.v3i1.e113 la disminución de electrones y huecos, por lo que hace aumentar los 𝐶 𝑛 y 𝐶 𝑝 (Häcker Rolf, Hangleiter Andreas, 1994) (Haouari-Merbah M., Belhamel M., Tobias I. andRuiz J., 2005).…”

Section: Recombinación Augerunclassified

Comparativa de resistencia oscura vs factor de relleno con doble contacto para mejorar la eficiencia en celdas fotovoltaicas BC-BJ.

MORALES¹,

Molina²,

OVIEDO³

2022

Tesla rev. cient.

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Section: Recombinación Augerunclassified

Comparativa de resistencia oscura vs factor de relleno con doble contacto para mejorar la eficiencia en celdas fotovoltaicas BC-BJ.

MORALES¹,

Molina²,

OVIEDO³

2022

Tesla rev. cient.

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“…Most researchers have used the illuminated I-V characteristics of solar cells for the determination of one or more of the diode parameters using single diode model [1][2][3][4][5][6][7][8][9][10][11][12][13][14][15] or double diode model [11,16,17], whereas some others have used the dark forward I-V characteristics [18][19][20][21] for the same. It has been observed by Khan et al [4], that if all the diode parameters are not obtained by a single method, then they are not compatible and do not describe the I-V characteristics accurately.…”

Section: Introductionmentioning

confidence: 99%

“…2 of solar cell using double diode model, which uses the linear regression for determination of ideality factors n 1 , n 2 and series resistance R s . Besides this Macabebe et al [19] and Merbah et al [20] have also developed numerical methods to determine diode parameters from dark forward I-V characteristics based on double diode model. However, none of these researchers [19][20][21] have shown if the extracted diode parameters can describe the characteristics accurately under the illumination conditions as well.…”

Section: Introductionmentioning

confidence: 99%

A novel analytical method for determination of diode parameters from the dark forward I–V characteristics of a silicon solar cell

Kumar¹,

Singh²,

Kumari³

et al. 2023

Phys. Scr.

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A new analytical method for determining all diode parameters using dark characteristics of a silicon solar cell is presented. This method has an advantage because the low- and high-voltage regions of the dark forward I-V characteristics of silicon solar cells can be described accurately by single-diode model, and only for the middle voltage region that the double-diode model may need to be applied. In view of this, a new methodology for the determination of series resistance Rs has been presented in this work, which uses only I, V values of four nearby points in the forward dark I-V characteristics and does not require knowledge of any other diode parameters. Applying the single- and double-diode models, the methodologies for determination of reverse saturation currents and ideality factors (I0, n for single diode model) and (I01, n1 and I02, n2 for the double diode model) have been described. The present method of measurement of the diode parameters was applied to three silicon solar cells. Theoretical I-V curves generated using so determined values of diode parameters (Rs, Rsh, I01, n1 and I02, n2) matched excellently well with the experimental I-V characteristics of the cells obtained under dark conditions and under simulated AM1.5G solar radiation up to 50 mW cm-2 intensity. We found that for higher intensities of illumination, while all other parameters remain constant, the value of I01,which is a representative parameter of bulk recombination, is slightly decreased with the increase in intensity.

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“…As a result, the obtained parameter set is useful in these kinds of simulations, but it may fail in predicting the electrical performance of the photovoltaic device. In some cases, the parameters of the solar cells are extracted, taking into account only the dark I-V characteristic [10][11][12][13][14][15][16], which can lead to high inaccuracy in the prediction of the MPP under illumination conditions, as the dark I-V measurement procedure does not provide information regarding short-circuit current [8].…”

Section: Introductionmentioning

confidence: 99%

Solar Cell Parameter Extraction Method from Illumination and Dark I-V Characteristics

et al. 2022

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A novel method to extract the seven parameters of the double-diode model of solar cells using the current–voltage (I-V) characteristics under illumination and in the dark is presented. The algorithm consists of two subroutines which are alternatively run to adjust all the parameters of the cell in an iterative process. Curve fitting of the light I-V characteristics ensures accuracy in the prediction of the maximum power point, whereas simultaneously fitting the dark I-V characteristics results in a set of physically meaningful parameters that provide information about the physical performance of the photovoltaic devices. Experimental I-V curves of in-house solar cells are used to validate the proposed parameter extraction method, which can be furthermore applied to other types of p–n junction-based photovoltaic devices.

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Method of extraction and analysis of solar cell parameters from the dark current-voltage curve

Cited by 6 publications

References 0 publications

Comparativa de resistencia oscura vs factor de relleno con doble contacto para mejorar la eficiencia en celdas fotovoltaicas BC-BJ.

Comparativa de resistencia oscura vs factor de relleno con doble contacto para mejorar la eficiencia en celdas fotovoltaicas BC-BJ.

A novel analytical method for determination of diode parameters from the dark forward I–V characteristics of a silicon solar cell

Solar Cell Parameter Extraction Method from Illumination and Dark I-V Characteristics

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