Method of Calculating the Inductance Value of MEMS Suspended Inductors with Silicon Substrates

Li, Yiyuan; Li, Jianhua; Xu, Lixin

doi:10.3390/mi9110604

Cited by 3 publications

(2 citation statements)

References 19 publications

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“…There were no significant differences in the other splits, and there was no difference between the end type and the peri type. Based on the above results, P active contact leakage characteristics of IMP Ti thickness of 250 Å or more are difficult to assume in terms of leakage, though the lower the RF etch and IMP Ti thickness, the better the resistance characteristics [35]. Figure 7 shows contact P + N BLC leakage according to the RF etching amount and IMP Ti deposition thickness.…”

Section: Resultsmentioning

confidence: 99%

Effect of Contact Plug Deposition Conditions on Junction Leakage and Contact Resistance in Multilevel CMOS Logic Interconnection Device

et al. 2020

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Here, we developed the optimal conditions in terms of physical and electrical characteristics of the barrier and tungsten (W) deposition process of a contact module, which is the segment connecting the device and the multi-layer metallization (MLM) metal line in the development of 100 nm-class logic devices. To confirm its applicability to the logic contact of barrier and W films, a contact hole was formed, first to check the bottom coverage and the filling status of each film, then to check the electrical resistance and leakage characteristics to analyze the optimal conditions. At an aspect ratio of 3.89:1, ionized metal plasma (IMP) Ti had a bottom coverage of 40.9% and chemical vapor deposition (CVD) titanium nitride (TiN) of 76.2%, confirming that it was possible to apply the process to 100 nm logic contacts. W filling was confirmed, and a salicide etching rate (using Radio Frequency (RF) etch) of 13–18 Å/s at a 3.53:1 aspect ratio was applied. The etching rate on the thermal oxide plate was 9 Å/s. As the RF etch amount increased from 50–100 Å, the P active resistance increased by 0.5–1 Ω. The resistance also increased as the amount of IMP Ti deposition increased to 300 Å. A measurement of the borderless contact junction leakage current indicated that the current in the P + N well increased by more than an order of magnitude when IMP Ti 250 Å or more was deposited. The contact resistance value was 0.5 Ω. An AC bias improved the IMP Ti deposition rate by 10% in bottom coverage, but there was no significant difference in contact resistance. In the case of applying IMP TiN, the overall contact resistance decreased to 2 Ω compared to CVD TiN, but the distribution characteristics were poor. The best results were obtained under the conditions of RF etch 50 Å, IMP Ti 200 Å, and CVD TiN 2 × 50 Å.

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Section: Resultsmentioning

confidence: 99%

Effect of Contact Plug Deposition Conditions on Junction Leakage and Contact Resistance in Multilevel CMOS Logic Interconnection Device

et al. 2020

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“…During the shutdown of pump mode, the motor shall be disconnected first and the opening angle of guide vane shall be slowly reduced. 6,7 Then, the counter-clockwise speed of the runner is reduced to 0 under the impact of the back-flow (from volute to runner). At this time, the runner immediately reverses to clockwise by using the energy of the back-flow.…”

Section: Introductionmentioning

confidence: 99%

Analyzing the S-characteristic of pump-turbine under the same head condition from the perspective of flow energy dissipation

Tao

Heng

Zhang

et al. 2023

Proceedings of the Institution of Mechanical Engineers, Part A:

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The S region on the full characteristic curve of pump-turbine is one of the important key features that affect its operation stability. In S region, one specific rotational speed value ( n11) corresponds to three specific flow rate values ( Q11), which causes the unit to fluctuate between different operation conditions. In this paper, focusing on the special region of pump-turbine, based on the combination of model experiment and numerical simulation, the S-region dynamic model of pump-turbine is established. The internal flow mechanism of pump-turbine is analyzed in detail from the perspective of Flow Energy Dissipation (FED). The results show that the high FED component is different at different operating points, but the flow energy maintain balance in the pump-turbine unit. High FED area displayed in near-wall or inter-channel of different components under different flow conditions. Besides, the generation of S region is related to the dynamic balance of energy especially in the no-load region. The analysis results of this paper provide theoretical basis for scientific and stable operation of pump-turbine.

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Cu-Doped Co₃O₄ microstructure as an efficient non-noble metal electrocatalyst for methanol oxidation in a basic solution

et al. 2021

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Method of Calculating the Inductance Value of MEMS Suspended Inductors with Silicon Substrates

Cited by 3 publications

References 19 publications

Effect of Contact Plug Deposition Conditions on Junction Leakage and Contact Resistance in Multilevel CMOS Logic Interconnection Device

Effect of Contact Plug Deposition Conditions on Junction Leakage and Contact Resistance in Multilevel CMOS Logic Interconnection Device

Analyzing the S-characteristic of pump-turbine under the same head condition from the perspective of flow energy dissipation

Cu-Doped Co₃O₄ microstructure as an efficient non-noble metal electrocatalyst for methanol oxidation in a basic solution

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Method of Calculating the Inductance Value of MEMS Suspended Inductors with Silicon Substrates

Cited by 3 publications

References 19 publications

Effect of Contact Plug Deposition Conditions on Junction Leakage and Contact Resistance in Multilevel CMOS Logic Interconnection Device

Effect of Contact Plug Deposition Conditions on Junction Leakage and Contact Resistance in Multilevel CMOS Logic Interconnection Device

Analyzing the S-characteristic of pump-turbine under the same head condition from the perspective of flow energy dissipation

Cu-Doped Co3O4 microstructure as an efficient non-noble metal electrocatalyst for methanol oxidation in a basic solution

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Cu-Doped Co₃O₄ microstructure as an efficient non-noble metal electrocatalyst for methanol oxidation in a basic solution