Method for Suppression of Stacking Faults in Wurtzite III−V Nanowires

Shtrikman, Hadas; Popovitz‐Biro, Ronit; Kretinin, A. V.; Houben, Lothar; Heiblum, Moty; Bukała, M.; Galicka, Marta; Buczko, R.; Kacman, P.

doi:10.1021/nl803524s

Cited by 173 publications

(187 citation statements)

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“…6 While bulk InAs crystallizes in cubic zinc-blende structure, it has been demonstrated that InAs nanowires can be grown in the wurtzite form. [7][8][9][10] In this paper, we use first-order polarized Raman scattering and resonant Raman scattering to investigate single InAs nanowires. First-order polarized Raman scattering have been recently used to investigate GaN, 11,12 GaAs, 13,14 GaP, 15 ZnO, 16 RuO 2 , 17 and CdS (Ref.…”

Section: Introductionmentioning

confidence: 99%

Polarized and resonant Raman spectroscopy on single InAs nanowires

et al. 2011

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We report polarized Raman scattering and resonant Raman scattering studies on single InAs nanowires. Polarized Raman experiments show that the highest scattering intensity is obtained when both the incident and analyzed light polarizations are perpendicular to the nanowire axis. InAs wurtzite optical modes are observed. The obtained wurtzite modes are consistent with the selection rules and also with the results of calculations using an extended rigid-ion model. Additional resonant Raman scattering experiments reveal a redshifted E 1 transition for InAs nanowires compared to the bulk zinc-blende InAs transition due to the dominance of the wurtzite phase in the nanowires. Ab initio calculations of the electronic band structure for wurtzite and zinc-blende InAs phases corroborate the observed values for the E 1 transitions.

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Section: Introductionmentioning

confidence: 99%

Polarized and resonant Raman spectroscopy on single InAs nanowires

et al. 2011

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Section: Introductionmentioning

confidence: 99%

“…32-34 With a judicious optimization of growth conditions, single NWs with a pure zinc-blende or wurzite structure can be obtained. [35][36][37] Still, the optical and electronic properties tend to fluctuate considerably from NW to NW, 2 which precludes the proper control of the response of an ensemble of nanowires.Recently, alternative approaches to obtain defect-free nano structures have been proposed. Particularly promising is the inversion of polarity from B to A as well as template assisted and nano-membrane assisted selective epitaxy (TASE and MASE, respectively).…”

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confidence: 99%

Revealing Large-Scale Homogeneity and Trace Impurity Sensitivity of GaAs Nanoscale Membranes

et al. 2017

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III-V nanostructures have the potential to revolutionize optoelectronics and energy harvesting. For this to become a reality, critical issues such as reproducibility and sensitivity to defects should be resolved. By discussing the optical properties of MBE grown GaAs nanomembranes we highlight several features that bring them closer to large scale applications. Uncapped membranes exhibit a very high optical quality, 1 arXiv:1704.08477v1 [cond-mat.mes-hall] 27 Apr 2017 expressed by extremely narrow neutral exciton emission, allowing the resolution of the more complex excitonic structure for the first time. Capping of the membranes with an AlGaAs shell results in a strong increase of emission intensity but also to a shift and broadening of the exciton peak. This is attributed to the existence of impurities in the shell, beyond MBE-grade quality, showing the high sensitivity of these structures to the presence of impurities. Finally, emission properties are identical at the sub-micron and sub-millimeter scale, demonstrating the potential of these structures for large scale applications.Keywords: GaAs/AlGaAs nano mebranes, photoluminescence, electronic and optical properties of ensemble vs single nano membrane Nanowires (NWs) are filamentary crystals with a diameter in the sub-micrometer down to nanometer range. Their special morphology, dimensions and high surface-to-volume ratio are often translated into advantageous optical and electrical properties. As a consequence, they have been widely used in electronics, 1-5 optoelectronics, 6,7 solar cells 8-11 and sensors. 12,13 If not adequately passivated, the surface recombination can limit the optical performance of the NWs. 14 In addition, surface depletion can also affect the volume distribution and separation of the carriers in the NW. 15-19 Different passivation methods have been employed in the past, notably capping of the free surfaces with a higher bandgap shell around the nanowire. [20][21][22] Nevertheless, capping also modifies the nature of the surface. Several effects have been reported, such as band bending at the interface leading to the accumulation of the charge at the interface or piezo electric strain. [23][24][25][26][27] In addition, the AlGaAs alloy typically used for capping GaAs nanowires is generally inhomogeneous, with directed and random segregation of Ga and Al forming respectively Al-rich ridges and Ga-rich nanoscale islands . 28,29 Simultaneously, III-V NWs can suffer from twin defects and polytypism, 30,31 which adversely affect their electronic and optical properties. 32-34 With a judicious optimization of growth conditions, single NWs with a pure zinc-blende or wurzite structure can be obtained. [35][36][37] Still, the optical and electronic properties tend to fluctuate considerably from NW to NW, 2 which precludes the proper control of the response of an ensemble of nanowires.Recently, alternative approaches to obtain defect-free nano structures have been proposed. Particularly promising is the inversion of polarity from B to A...

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“…Among the indirect band gap III-V semiconductors with zinc blende (ZB) crystal structure, GaP is predicted to become a direct band gap material when grown with wurtzite (WZ) crystal structure. [1][2][3][4][5] Semiconductor nanowires (NWs) have shown excellent control of the growth of ZB-WZ phases, [6][7][8][9] allowing crystal structure band engineering. [10][11][12] Recently, the Auseeded growth of high purity WZ GaP nanowires via vaporliquid-solid (VLS) method was demonstrated, and the optical properties have been investigated.…”

Section: Introductionmentioning

confidence: 99%