“…Because of the slight difference in the lattice constants in silicon and germanium crystals (for example, the spacing between the (100) layers in Si and Ge is 1.358 and 1.414 Å , respectively), the addition of a small content of Ge to Si in the molecular beam epitaxy (MBE) growing process results in the strain in the crystal which, in turn, leads to the lattice bending [218]. By varying the germanium content x [24,26,27,31,42,185,187,218] one can obtain periodically bent crystalline channels. 2 In [31] it is mentioned that, probably, for the first time radiation production on the basis of this kind of periodic structures was mentioned by Kephart et al [140].…”