Method for increasing reliability in gas detection based on indicator gradient in a sensor array

Hutter, Tanya; Horesh, Moran; Ruschin, S.

doi:10.1016/j.snb.2010.09.058

Cited by 12 publications

(11 citation statements)

References 29 publications

(29 reference statements)

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“…Hutter et al also used a sensor array for gas detection. However, to obtain a specific response from the sensor, they used PSi monolayers, infiltrated with a pH‐sensitive dye (bromocresol purple) at various concentrations.…”

Section: Approaches To Optimization Of Psi‐based Gas and Vapor Sensorsmentioning

confidence: 99%

“…The transduction mechanism consisted of changing the reflection coefficient due to the spectral shift of the absorption band of the dye. Hutter et al showed that the correlation of the array output (vector of four signals) made it possible to detect ammonia, minimizing a false alarm due to the presence of humidity and unstable illumination.…”

Section: Approaches To Optimization Of Psi‐based Gas and Vapor Sensorsmentioning

confidence: 99%

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How to Improve the Performance of Porous Silicon‐Based Gas and Vapor Sensors? Approaches and Achievements

Rusu

2019

Physica Status Solidi (a)

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It is shown that, along with the advantages, sensors based on porous silicon (PSi) have disadvantages that inhibit their widespread use. The parameters of PSi which can affect the performance of PSi-based sensors are considered in detail, and approaches are analyzed that allow for the improvement of the main characteristics of PSi-based gas and vapor sensors. It is concluded that despite the progress made in terms of improving the sensitivity, selectivity, and stability of PSi-based sensors, further research and development in this direction is necessary, as the existing methods do not provide the required stability of the characteristics and selectivity of their response.

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Section: Approaches To Optimization Of Psi‐based Gas and Vapor Sensorsmentioning

confidence: 99%

Section: Approaches To Optimization Of Psi‐based Gas and Vapor Sensorsmentioning

confidence: 99%

How to Improve the Performance of Porous Silicon‐Based Gas and Vapor Sensors? Approaches and Achievements

Rusu

2019

Physica Status Solidi (a)

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“…In this section, we present another method for improving the detection reliability for a given chemical in the presence of other chemical agents or perturbations that generate spurious signals (Hutter et al, 2011). The method provides a thresholding parameter which can be tuned by the user according to his priority considerations between sensitivity and selectivity.…”

Section: Sensor Arrays Based On Indicator Gradientmentioning

confidence: 99%

Some Methods for Improving the Reliability of Optical Porous Silicon Sensors

Hutter¹,

Ruschin²

2012

Advances in Chemical Sensors

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“…PS has many potential application areas such as optoelectronics and biosensing [4][5][6], mainly because it retains the advantages of silicon technology while adding the ability of controlling optical properties. Porosity, thickness, pore diameter, pore morphology and distance between pores are some of the tunable properties available during fabrication [7].…”

Section: Introductionmentioning

confidence: 99%

Pore Morphology of Heavily Doped P-Type Porous Silicon

Martín-Sánchez

Ponce-Alcántara

García-Rupérez

2018

5th International Electronic Conference on Sensors and Applications

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Tuning the pore diameter of porous silicon (PS) is essential for some applications such as biosensing, where the pore size can filter the entrance of some analytes or increase its sensitivity. However, macropore (>50 nm) formation on p-type silicon is still poorly known due to the strong dependence on resistivity. Electrochemically etching heavily doped p-type silicon usually forms micropores (<5 nm), but it has been found that bigger sizes can be achieved by adding an organic solvent to the electrolyte. In this work, we present the results of using dimethylformamide (DMF), dimethylsulfoxide (DMSO), potassium hydroxide (KOH) and sodium hydroxide (NaOH) for macropore formation in p-type silicon with a resistivity between 0.001 and 0.02 Ω∙cm, achieving pore sizes from 5 to 100 nm.

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Method for increasing reliability in gas detection based on indicator gradient in a sensor array

Cited by 12 publications

References 29 publications

How to Improve the Performance of Porous Silicon‐Based Gas and Vapor Sensors? Approaches and Achievements

How to Improve the Performance of Porous Silicon‐Based Gas and Vapor Sensors? Approaches and Achievements

Some Methods for Improving the Reliability of Optical Porous Silicon Sensors

Pore Morphology of Heavily Doped P-Type Porous Silicon

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