Method for determining the emitter and base series resistances of bipolar transistors

Ning, T.H.; Tang, D.D.

doi:10.1109/t-ed.1984.21541

Cited by 150 publications

(32 citation statements)

References 9 publications

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“…1 indicates that the lowest base currents are obtained when the interfacial oxide is intact and the silicon is polycrystalline, and the highest base current when the interfacial oxide is broken up and the silicon is single-crystal. These results are consistent with a base current dominated by [42] as a function of reciprocal emitter area for transistors produced using the different types of ex-situ and in-situ cleans and different deposition systems. The Ning-Tang intercept was measured on different geometry transistors and the slope of the graph gives the specific interface resistivity [43].…”

Section: A Materials and Interface Characterizationsupporting

confidence: 83%

“…5 shows the determination of the specific interface resistivity on the three types of transistor using the NingTang method [42]. For each type of device, the emitter resistance was measured on devices with different geometries and the Ning-Tang intercept [42] plotted as a function of reciprocal emitter area. A linear regression was performed through the data points with the specific interface resistivity given by the slope of the linear fit [43].…”

Section: B Electrical Characterizationmentioning

confidence: 99%

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Impact of ex-situ and in-situ cleans on the performance of bipolar transistors with low thermal budget in-situ phosphorus-doped polysilicon emitter contacts

Rahim

Marsh

Ashburn

et al. 2001

IEEE Trans. Electron Devices

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Abstract-This paper investigates the effects of an in-situ hydrogen bake and an ex-situ hydroflouric acid (HF) etch prior to polysilicon deposition on the electrical characteristics of bipolar transistors fabricated with low thermal budget in-situ phosphorusdoped polysilicon emitter contacts. Emitter contact deposition in a UHV-compatible low pressure chemical vapor deposition (LPCVD) cluster tool is also compared with deposition in a LPCVD furnace. Transmission electron microscopy (TEM) and secondary ion mass spectroscopy (SIMS) are used to characterize the emitter contact material and the interface structure and a comparison is made with Gummel plots and emitter resistances on bipolar transistors. The SIMS results show that an in-situ hydrogen bake in a cluster tool gives an extremely low oxygen dose at the interface of 6.3 10 13 cm 2 , compared with 7.7 10 14 and 2.9 10 15 cm 2 for an ex-situ HF etch and deposition in a cluster tool or a LPCVD furnace, respectively. TEM shows that the in-situ hydrogen bake results in single-crystal silicon with a high density of defects, including dislocations and twins. The ex-situ HF etch gives polycrystalline silicon for deposition in both a cluster tool and a LPCVD furnace. The single-crystal silicon emitter contact has an extremely low emitter resistance of 21 m 2 in spite of the high defect density and the light emitter anneal of 30 s at 900 C. This compares with emitter resistances of 151 and 260 m 2 for the polycrystalline silicon contacts produced using an ex-situ HF etch and deposition in a cluster tool or a LPCVD furnace, respectively. These values of emitter resistance correlate well with the interface oxygen doses and the structure of the interfacial oxide layer. The high defect density in the single-crystal silicon is considered to be due to the high concentration of phosphorus ( 5 10 19 cm 3 ) in the as-deposited layers.Index Terms-Bipolar transistor, cluster tool, in-situ doped polysilicon, polycrystalline silicon, polysilicon, polysilicon emitter.

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Section: A Materials and Interface Characterizationsupporting

confidence: 83%

Section: B Electrical Characterizationmentioning

confidence: 99%

Impact of ex-situ and in-situ cleans on the performance of bipolar transistors with low thermal budget in-situ phosphorus-doped polysilicon emitter contacts

Rahim

Marsh

Ashburn

et al. 2001

IEEE Trans. Electron Devices

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“…This method was first presented in [12]. It assumes that any deviation of the base current from its ideal exponential characteristic is due to the voltage drop across the series resistances.…”

Section: Extraction From the DC Base Resistancementioning

confidence: 99%

“…with the emitter series resistance R E , the nonideality factor of the BE diode m BE , which was added here compared to [12] and the forward DC current gain B f . The resistances are extracted from a linear regression of the measured l.h.s.…”

Section: Extraction From the DC Base Resistancementioning

confidence: 99%

“…The impact of R B is expected to increase with advancing technology nodes due to shrinking vertical dimensions and correspondingly higher contact and partially also sheet resistances [6,7]. A large number of methods exist in the literature for the determination of R B [8][9][10][11][12][13][14][15][16][17][18][19][20][21][22][23][24][25] with, unfortunately, widely varying results when applied to the same transistor (e.g. [5,8]).…”

Section: Introductionmentioning

confidence: 99%

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