Abstract:The method of processing the data of electrophysical investigations of ohmic contacts has been developed. It allows obtaining more accurate results of measuring the contact resistance and additional information by analyzing the statistical and spatial distribution of input data. To test the method, the Au-Ge-TiB 2-Au contact to n-n +-GaAs was used. The analysis of frequency distribution for the total resistance, specific contact resistance and surface resistance of semiconductor has been carried out. The spati… Show more
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