2000
DOI: 10.1016/s0168-583x(00)00252-4
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Method and experimental arrangement for Al thin film deposition from r.f. metal plasma with simultaneous self-ion bombardment

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Cited by 4 publications
(2 citation statements)
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“…In addition to the generation of thermal stress, water vapor can be released from the polymer due to substrate heating, thus increasing the oxygen content in the deposited thin film [161]. Modeling of the kinetics of substrate temperature were recently carried out by Mohnjuk et al in the case of a RF plasma deposition [162], and by Andritschky et al [148] in case of magnetron sputtering. Taking the LCTE of SiO x equal to 2.7 .…”
Section: Thermal Stressmentioning
confidence: 99%
“…In addition to the generation of thermal stress, water vapor can be released from the polymer due to substrate heating, thus increasing the oxygen content in the deposited thin film [161]. Modeling of the kinetics of substrate temperature were recently carried out by Mohnjuk et al in the case of a RF plasma deposition [162], and by Andritschky et al [148] in case of magnetron sputtering. Taking the LCTE of SiO x equal to 2.7 .…”
Section: Thermal Stressmentioning
confidence: 99%
“…[1][2][3][4][5][6] In order to estimate the energy flux density, several techniques have been used based, namely, on surface temperature measurements. This influences the film growth, modification, or etching processes.…”
Section: Introductionmentioning
confidence: 99%