Metastable tetragonal structure of Fe<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:msub><mml:mrow /><mml:mrow><mml:mn>100</mml:mn><mml:mo>−</mml:mo><mml:mi>x</mml:mi></mml:mrow></mml:msub></mml:math>Ga<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:msub><mml:mrow /><mml:mi>x</mml:mi></mml:msub></mml:math>epitaxial thin films on ZnSe/GaAs(001) substrate

Resonant magnetoelastic coupling (MEC) is demonstrated in an Fe thin film epitaxially grown on a piezoelectric GaAs substrate with application of subgigahertz surface acoustic waves (SAWs). The frequency at which resonant MEC is achieved is reduced far below 1 GHz by the application of a small in-plane magnetic field. Moreover, the resonance, observable by attenuation and velocity changes of the SAW, can be switched on and off by a small (0.1 •) angular rotation of this in-plane field. This angular sensitivity makes SAW-ferromagnet devices attractive for sensing applications, such as wireless, batteryfree, and interrogable magnetic-field monitors. Using a simple magnetization dynamics model that takes into account the Fe magnetic anisotropy and the softening of the magnetic precession modes, we are able to describe the observed salient features.

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“…Details are given in Ref. [21]. To quantify the mosaicity of the sample, we measure the FWHM of the (002) planes.…”

Section: Growth and Characterization Of Iron Thin Films: Details mentioning

confidence: 99%

Surface-Acoustic-Wave Induced Ferromagnetic Resonance in Fe Thin Films and Magnetic Field Sensing

et al. 2019

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“…In Ref. [19] we show that a tetragonal structure can be stabilized by specific growth procedures. This distortion is attributed to Ga preferential ordering along the growth direction, i.e., the [001] direction.…”

Section: Introductionmentioning

confidence: 98%

Bulklike behavior of magnetoelasticity in epitaxial Fe1−xGax thin films

et al. 2019

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Bulk Fe 1−x Ga x alloys present a strong sensitivity of the magnetostrictive properties with Ga content with maximum magnetostriction near x = 0.19. Here, we present magnetoelastic coefficients measured by the cantilever method on Fe 1−x Ga x thin films grown by molecular beam epitaxy on GaAs(001). We find that Ga-dependent magnetoelastic coefficients in nanometer thin films are comparable in magnitude to the respective bulk values. Moreover, we compare thin films with a tetragonal structure due to a slightly preferential alignment of Ga pairs along the growth direction with and a cubic structure. It turns out that magnetoelastic coefficients are unaffected by a preferential alignment of Ga pairs along the growth direction.

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“…The curve shows the same square hysteresis with the same coercive field of about 95 Oe. In total electron yield the probing depth is expected to be of few nm and therefore to collect signal only from the top Fe 1 À x Ga x layer of 20 nm thickness [14,15]. Thus the top Fe 1 À x Ga x layer shows a ferromagnetic behavior with a single coercive field of 95 Oe.…”

Section: Resultsmentioning

confidence: 99%

“…The substrate temperature is gradually increased until 180°C, the surface MgO/Fe epilayer showed a weak 1 Â 1 streaklike RHEED diffraction pattern. On this MgO/Fe epilayer surface 20 nm-thickness of Fe 0.8 Ga 0.2 thin films were deposited by molecular beam epitaxy with growth rate of 0.2 nm per minute and with an appropriate stoecchiometry proportion of the beam equivalent pressures of Fe and Ga [14]. At the early stage of the growth, the surface of Fe 1 À x Ga x film showed 3D-spot-like features and once the coverage increases the spots were accompanied with steaks patterns, indicating the improvement of the crystalline film quality.…”

Section: Methodsmentioning

confidence: 99%