Metastable Solvent Epitaxy of SiC, the Other Diamond Synthetics

Nishitani, Shigeto R.; Togase, Kensuke; Yamamoto, Yosuke; Fujiwara, H.; Kaneko, Tadaaki

doi:10.5772/21772

Cited by 1 publication

(1 citation statement)

References 39 publications

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“…So far, most of the known SiC layer materials have been prepared by alloying silicon with carbon and using remote plasma-enhanced CVD, whereas the main obstacle is the extremely low solubility of carbon in silicon. , Again, the solution process can be seen as a promising alternative to the vapor methods. Nevertheless, the yield of such methods does not yet exceed that of vapor methods. – …”

Section: Introductionmentioning

confidence: 99%

Fabrication of Amorphous Silicon–Carbon Hybrid Films Using Single-Source Precursors

Sauermoser,

Lainer,

Knoechl

et al. 2023

Inorg. Chem.

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The aim of this study was the preparation of different amorphous silicon–carbon hybrid thin-layer materials according to the liquid phase deposition (LPD) process using single-source precursors. In our study, 2-methyl-2-silyltrisilane (methylisotetrasilane; 2), 1,1,1-trimethyl-2,2-disilyltrisilane (trimethylsilylisotetrasilane; 3), 2-phenyl-2-silyltrisilane (phenylisotetrasilane; 4), and 1,1,2,2,4,4,5,5-octamethyl-3,3,6,6-tetrasilylcyclohexasilane (cyclohexasilane; 5) were utilized as precursor materials and compared with the parent compound 2,2-disilyltrisilane (neopentasilane; 1). Compounds 2–5 were successfully oligomerized at λ = 365 nm with catalytic amounts of the neopentasilane oligomer (NPO). These oligomeric mixtures (NPO and 6–9) were used for the preparation of thin-layer materials. Optimum solution and spin coating conditions were investigated, and amorphous silicon–carbon films were obtained. All thin-layer materials were characterized via UV/vis spectroscopy, light microscopy, spectroscopic ellipsometry, XPS, SEM, and SEM/EDX. Our results show that the carbon content and especially the bandgap can be easily tuned using these single-source precursors via LPD.

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