The deexcitation rate of metastable 3 S He ء atoms was measured during the growth of Na, K, and Cs films on a Cu(100) surface. As a consequence of the reduced work function, which is caused by adsorption of small amounts of alkali metals, the He ء deexcitation mainly takes place via Auger deexcitation. Since the incident He ء atoms interact only with the vacuum side tails of the electronic states of the surface atoms, the deexcitation rate for this mechanism reflects the electronic surface density of states. At coverages of about 0.4 monolayer a dramatic increase in the deexcitation rate was obtained, which is attributed to the subsequent filling of the alkali metal valence band and thus the onset of metallization. 71.20.Dg, 71.30. + h, 73.20.At The adsorption of alkali metal (AM) atoms on surfaces has been studied extensively since Langmuir discovered a large enhancement of electron emissivity for AM covered metal surfaces [1][2][3][4]. Although AM atoms are considered as prototypical chemisorption systems because of their electronic simplicity, they reveal a rather complex behavior. Because of their different electron affinity compared to metal substrates a significant fraction of the AM valence s electron is displaced towards the metal surface and creates a dipole moment. With increasing coverage these dipoles become depolarized and the AM atoms begin to form a metallic film. Since then this classical picture, originally proposed by Gurney [5], has been refined by realistic quantum theoretical calculations [4,6,7]. The metallic character of a complete AM monolayer on metal substrates is well established [2], whereas the metallization transition itself is difficult to observe experimentally.The direct observation of occupied AM s-valence states by ultraviolet photoelectron spectroscopy, the standard tool to study the electronic structure of adsorbate systems, is hampered by the low density of states (DOS) of the s band which is superimposed on the high density of states of the substrate at the Fermi level and additionally by the small photoemission cross section of s states [8]. Woratschek et al. utilized the unique surface sensitivity of metastable deexcitation spectroscopy (MDS) [9] to overcome this difficulty and measured the occupation of the 4s level of K atoms adsorbed on Cu(110) [8,10]. However, their interpretation was questioned in a later MDS study by Hemmen and Conrad who demonstrated that the observed electron emission near the Fermi edge is mainly caused by an autodetachment process of the impinging metastable He ء atoms [11].Here we introduce a new approach by combining the high sensitivity of ground state He atom scattering (HAS) for measuring the AM coverage and the extreme surface sensitivity of the metastable atom deexcitation rate to detect modifications of the electronic surface structure. We report on measurements of the survival probability of He ء atoms scattered from a Cu(100) surface as a function of the Na, K, and Cs coverage. At relative K and Cs coverages of u 0.13 and ...