Metastability of the phosphorus antisite defect in low-temperature InP

Abstract

We report on the transport properties of low-temperature ͑LT͒ InP/In x Ga 1Ϫx As/InP heterostructures and LT InP thin films. Hall effect measurements performed at hydrostatic pressure up to 1.5 GPa and temperatures ranging from 4.2 K to 250 K on both types of samples as well as Shubnikov-de Haas experiments made on heterostructures clearly reveal the metastable character of phosphorus antisite defects present in LT InP layers.

Effect of hydrostatic pressure on degradation of CdTe/CdMgTe heterostructures grown by molecular beam epitaxy on GaAs substrates

“…[18]. Calculations have shown that for 7 all our samples, like the case described in [18], a potential valley is formed spontaneously outside the QW in the region of doping with iodine donors. This leads to redistribution of free electrons between the quantum well and the valley and the appearance of an additional lowmobility conductance channel in the barrier.…”

“…To explain the presence of the parallel electron transport channel we performed theoretical calculations of the conduction band energy profiles adopting numerical procedure used for InP/InGaAs heterostructures in Ref. [18]. Calculations have shown that for 7 all our samples, like the case described in [18], a potential valley is formed spontaneously outside the QW in the region of doping with iodine donors.…”