Metastability of Si1−yCy epilayers under 2MeV α-particle irradiation

Berti, M.; Salvador, D. De; Drigo, A. V.; Петрович, Милешко Леонид; Stangl, J.; Schäffler, F.; Zerlauth, S.; Bauer, G.; Armigliato, A.

doi:10.1016/s0968-4328(99)00095-5

Cited by 1 publication

(1 citation statement)

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“…It was demonstrated, for example, that Si 1Ϫx C x alloys suffer of this effect and that it is particularly important for C yield. 21 In order to test this effect, repeated NRA channeling measurements were performed on the same spot. Effectively, in spite of the large beam diameter used, which allows us to reduce the ion fluence, the minimum yield increases with the integrated charge at a typical rate of 1.5%/100 C. This rate of damage was taken into account in the data reduction.…”

Section: B Substitutional Fraction Measurementsmentioning

confidence: 99%

Determination of lattice parameter and of N lattice location in InxGa1−xNyAs1−y/GaAs and GaNyAs1−y/GaAs epilayers

Bisognin

Salvador

Mattevi

et al. 2004

Journal of Applied Physics

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We have used an experimental strategy that, combining nuclear reaction analysis and Rutherford backscattering spectrometry both in random and channeling geometry, allowed an accurate quantification of the total amount of N in InxGa1−xNyAs1−y/GaAs and GaNyAs1−y/GaAs epitaxial systems (0.038<x<0.044, 0.015<y<0.045), and a precise localization of nitrogen atoms into the lattice. All N atoms were found on substitutional positions. This information was then exploited to correlate the relaxed lattice parameter of the epilayers obtained by high-resolution x-ray diffraction to the N concentration, by taking into account the elasticity theory, allowing a verification of the validity of Vegard’s rule in the whole range of investigated N concentrations for both alloys. The effect of N incorporation on the lattice parameter has been found to be the same both for ternary and quaternary alloys.

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Section: B Substitutional Fraction Measurementsmentioning

confidence: 99%