Metamorphosis of strain/stress on optical band gap energy of ZAO thin films via manipulation of thermal annealing process

Malek, M. F.; Mamat, M. H.; Musa, M.Z.; Soga, Tetsuo; Rahman, Saidur; Alrokayan, Salman A.; Khan, Haseeb A.; Rusop, M.

doi:10.1016/j.jlumin.2014.12.003

Cited by 41 publications

(18 citation statements)

References 63 publications

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“…3(a) and 3(b), as previously reported. 10) The AZO seeded layer possesses a crystallite size of approximately 23 nm with a thickness of 135 nm. Figures 3(c)-3(h) illustrate the top and cross-sectional view of the FESEM images of ZnO nanorod array thin films deposited at various growth times.…”

Section: Resultsmentioning

confidence: 99%

Thickness-controlled synthesis of vertically aligned c-axis oriented ZnO nanorod arrays: Effect of growth time via novel dual sonication sol–gel process

Malek

Mamat

Soga

et al. 2015

Jpn. J. Appl. Phys.

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Zinc-oxide (ZnO) nanorod arrays were successfully prepared by using dual sonication sol-gel process. Field emission scanning electron microscopy revealed that the nanorods exhibited a hexagonal structure with a flat-end facet. The nanorods displayed similar surface morphologies and grew uniformly on the seed layer substrate, with the average diameter slightly increasing to the range of 65 to 80 nm after being immersed for varying growth times. Interestingly, thickness measurements indicated that the thicknesses of the samples increased as the growth time was extended. In addition, the X-ray diffraction spectra indicated that the prepared ZnO nanorods with a hexagonal wurtzite structure grew preferentially along the c-axis. Therefore, we can conclude that the diameter, length, and orientation of the ZnO nanorod arrays along the c-axis are controllable by adjusting the growth time, motivating us to further explore the growth mechanisms of ZnO nanorods.

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Section: Resultsmentioning

confidence: 99%

Thickness-controlled synthesis of vertically aligned c-axis oriented ZnO nanorod arrays: Effect of growth time via novel dual sonication sol–gel process

Malek

Mamat

Soga

et al. 2015

Jpn. J. Appl. Phys.

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“…Furthermore, there is a reduction for structural defects of the film at high annealing temperature (shown in Figure 3d). The Urbach energy (

E_{u}

) is an empirical parameter representing structural defects and can be extracted from the absorption coefficient [15,16]. The

E_{u}

is extracted using Equation (4):

α = α_{0} e x p (\frac{h v}{E_{u}}),

where

α_{0}

is the pre-exponential factor.…”

Section: Resultsmentioning

confidence: 99%

Effect of Intrinsic Stress on Structural and Optical Properties of Amorphous Si-Doped SnO2 Thin-Film

et al. 2017

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The effect of intrinsic stress on the structure and physical properties of silicon-tin-oxide (STO) films have been investigated. Since a state of tensile stress is available in as-deposited films, the value of stress can be exponentially enhanced when the annealing temperature is increased. The tensile stress is able to not only suppress the crystallization and widen the optical band gap of STO films, but also reduce defects of STO films. In this report, the good electrical performance of STO thin-film transistors (TFTs) can be obtained when annealing temperature is 450 °C. This includes a value of saturation mobility that can be reached at 6.7 cm2/Vs, a ratio of Ion/Ioff as 7.34 × 107, a steep sub-threshold swing at 0.625 V/decade, and a low trap density of 7.96 × 1011 eV−1·cm−2, respectively.

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“…Besides, we observed an enhancement of peak intensity especially for (002) plane which indicates that doping with Pb manage to improve the crystallinity of the ZnO film. The average crystallite sizes were acquired from the given equation [14]:…”

Section: Structural Propertiesmentioning

confidence: 99%

Structural, Optical, and Humidity Sensing Performance of Pb-Doped Zno Nanostructure Prepared by Sol-Gel Immersion Method

Suriani¹

2019

IJATCSE

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Lead (Pb)-doped zinc oxide (ZnO) nanostructured film was prepared using sol-gel immersion method. The surface morphology of the ZnO films displayed a significant change in structure after doped with Pb. The diameter of the nanostructures was increased from 50 nm to 80 nm after doped. Besides, the crystallinity of the film was improved after doped with Pb, as well as the crystallite size of the Pb-doped ZnO film. The Pb-doped ZnO film showed excellent transmittance properties with average transmittance of 83%. Pb-doped sample displayed better absorbance than that of undoped ZnO at UV region and also have high optical band gap energy of 3.27 eV. In addition, Pb-doped ZnO film exhibited a stable response to humidity change with a sensitivity of 1.21.

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Metamorphosis of strain/stress on optical band gap energy of ZAO thin films via manipulation of thermal annealing process

Cited by 41 publications

References 63 publications

Thickness-controlled synthesis of vertically aligned c-axis oriented ZnO nanorod arrays: Effect of growth time via novel dual sonication sol–gel process

Thickness-controlled synthesis of vertically aligned c-axis oriented ZnO nanorod arrays: Effect of growth time via novel dual sonication sol–gel process

Effect of Intrinsic Stress on Structural and Optical Properties of Amorphous Si-Doped SnO2 Thin-Film

Structural, Optical, and Humidity Sensing Performance of Pb-Doped Zno Nanostructure Prepared by Sol-Gel Immersion Method

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